Datasheet > 49SABFREQ1B32GHE-E(T)

49SABFREQ1B32GHE-E(T)

更新时间： 2024-11-14 18:29:27

品牌	Logo	应用领域
百利通 - PERICOM		/
页数	文件大小	规格书
4页	588K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

49SABFREQ1B32GHE-E(T) 数据手册

浏览型号49SABFREQ1B32GHE-E(T)的Datasheet PDF文件第2页

浏览型号49SABFREQ1B32GHE-E(T)的Datasheet PDF文件第3页

浏览型号49SABFREQ1B32GHE-E(T)的Datasheet PDF文件第4页

HC-49/S, Low Profile, SMD

Miniature Quartz Crystal

49SMLB / 49SAB / 49SUB / 49SNC

Actual Size

Product Description

Frequency Range:

The crystals are miniature AT or BT cut strip

resonators housed in low profile packages for

surface mounting. The parts present a proven metal

package technology with a precision molded base

and universal contact configuration.

• 3.2 to 29.999 MHz, AT Fundamental

• 26.8 to 50.000 MHz, BT Fundamental

• 30.0 to 80.000 MHz, AT 3rd OT

Temperature Range:

• Operating: –20 to +70°C Standard (see options below)

• Storage: –55 to +125°C

Product Features

Temperature Stability Tolerance:

• 49SNC is interchangeable with popular molded

crystal configurations.

• Lead (Pb)-free RoHS Compliant Version Available

• ±30ppm, –20 to +70°C

• ±50ppm, –40 to +85°C, or

• ±100ppm, –40 to +85°C

• 0 to –100ppm for BT

Typical Applications

• Set-Top Box

• Others available

• Clock/VCXO Multiplier

• Fibre Channel

• Ethernet

• Modems

• ADSL

Characteristics at 25°C ±2°C:

• Frequency Calibration Tolerance: ±30ppm, ±50ppm (others avail)

• Load Capacitance: 16 to 32pF or Series Resonance

• Effective Series Resistance: 30 to 200-ohm (frequency dependent)

• Drive Level: 100µW correlation, 500µW Max operating

• Shunt Capacitance: 7pF Max.

• ISDN

• Microcontrollers

• Remote control devices

• Network processors

• Audio/Video

Mechanical:

• Shock: MIL-STD-883, Method 2002, Condition B

• Solderability: MIL-STD-883, Method 2003

• Solderability: JESD22-B102-D Method 2 (Preconditioning E)

• Terminal Strength: MIL-STD-202, Method 211,

Conditions A and C

• Vibration: MIL-STD-883, Method 2007, Condition A

• Solvent Resistance: MIL-STD-202, Method 215

• Resistance to Soldering Heat: MIL-STD-202, Method 210,

Condition I or J

• Resistance to Soldering Heat: J-STD-020C Table 5-2 Pb-free

devices (3 cycles max)

Environmental:

• Gross Test Leak: MIL-STD-883, Method 1014, Condition C

• Fine Test Leak: MIL-STD-883, Method 1014, Condition A

• Thermal Shock: MIL-STD-883, Method 1011, Condition A

• Moisture Resistance: MIL-STD-883, Method 1004

Reflow Temperature:

• Standard: 240°C Max

• Lead-free: 260°C Max, 10 sec max

Pericom Semiconductor Corporation • 1-800-435-2336 • http://www.pericom.com/saronix

All specifications are subject to change without notice.

DS-153 Rev E13 | 05/27/2005

12 3 4

中文翻译

下载PDF

与49SABFREQ1B32GHE-E(T)相关器件

型号	品牌	获取价格	描述	数据表
49SABFREQ1B32HJE(T)	PERICOM	获取价格	Parallel - Fundamental Quartz Crystal, 3.2MHz Min, 29.999MHz Max, SMD, 4 PIN
49SABFREQ1B32HJE-E	PERICOM	获取价格	Parallel - Fundamental Quartz Crystal, 3.2MHz Min, 29.999MHz Max, ROHS COMPLIANT, SMD, 4 P
49SABFREQ1B32HJE-E(T)	PERICOM	获取价格	Parallel - Fundamental Quartz Crystal, 3.2MHz Min, 29.999MHz Max, ROHS COMPLIANT, SMD, 4 P
49SABFREQ1GGC-E(T)	PERICOM	获取价格	Series - Fundamental Quartz Crystal, 3.2MHz Min, 29.999MHz Max, ROHS COMPLIANT, SMD, 4 PIN
49SABFREQ1GHE(T)	PERICOM	获取价格	Series - Fundamental Quartz Crystal, 3.2MHz Min, 29.999MHz Max, SMD, 4 PIN
49SABFREQ1GHE-E	PERICOM	获取价格	Series - Fundamental Quartz Crystal, 3.2MHz Min, 29.999MHz Max, ROHS COMPLIANT, SMD, 4 PIN
49SABFREQ1GHE-E(T)	PERICOM	获取价格	Series - Fundamental Quartz Crystal, 3.2MHz Min, 29.999MHz Max, ROHS COMPLIANT, SMD, 4 PIN
49SABFREQ1HJE	PERICOM	获取价格	Series - Fundamental Quartz Crystal, 3.2MHz Min, 29.999MHz Max, SMD, 4 PIN
49SABFREQ1HJE(T)	PERICOM	获取价格	Series - Fundamental Quartz Crystal, 3.2MHz Min, 29.999MHz Max, SMD, 4 PIN
49SABFREQ1HJE-E	PERICOM	获取价格	Series - Fundamental Quartz Crystal, 3.2MHz Min, 29.999MHz Max, ROHS COMPLIANT, SMD, 4 PIN

与49SABFREQ1B32GHE-E(T)相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

5
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

2
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

29
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

12

产品中心

服务支持

精选活动

关于我们

帮助中心

49SABFREQ1B32GHE-E(T)

49SABFREQ1B32GHE-E(T) 数据手册

与49SABFREQ1B32GHE-E(T)相关器件

与49SABFREQ1B32GHE-E(T)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

49SABFREQ1B32GHE-E(T)

49SABFREQ1B32GHE-E(T) 数据手册

与49SABFREQ1B32GHE-E(T)相关器件

与49SABFREQ1B32GHE-E(T)相关文章

您还可以找

您在本页遇到什么问题？