Product Specification
PE4283
SPDT High Power UltraCMOS™
DC – 4.0 GHz RF Switch
Product Description
The PE4283 RF Switch is designed to cover a broad range
of applications from DC through 4000 MHz. This reflective
switch integrates on-board CMOS control logic with a low
voltage CMOS-compatible control interface, and can be
controlled using either single-pin or complementary control
inputs. The PE4283 operates using a +3 volt power supply.
Features
• Single-pin or complementary CMOS
logic control inputs
• 1.5 kV ESD tolerance
• Low insertion loss: 0.65 dB at
1000 MHz, 0.70 dB at 2500 MHz
The PE4283 SPDT High Power RF Switch is manufactured
on Peregrine’s UltraCMOS™ process, a patented variation
of silicon-on-insulator (SOI) technology on a sapphire
substrate, offering the performance of GaAs with the
economy and integration of conventional CMOS.
• RFC-RF1/RF2 isolation of 33.5 dB at
1000 MHz, 21.5 dB at 2500 MHz
• RF1-RF2 isolation of 37.5 dB at
1000 MHz, 22 dB at 2500 MHz
• Typical input 1 dB compression point
of +32 dBm
Figure 1. Functional Diagram
• Ultra-small SC-70 package
RFC
Figure 2. Package Type SC-70
6-lead SC-70
RF1
RF2
CMOS
Control
Driver
V1
V2
Table 1. Electrical Specifications @ +25 °C, VDD = 3 V (ZS = ZL = 50 Ω)
Parameter
Conditions
Typical
Units
Min
Max
Operation Frequency1
DC - 4000
DC
4000
MHz
1000 MHz
2500 MHz
0.65
0.70
0.75
0.80
dB
dB
Insertion Loss
1000 MHz
2500 MHz
31.5
19.5
33.5
21.5
dB
dB
Isolation: RFC - RF1/RF2
1000 MHz
2500 MHz
35.5
20
37.5
22
dB
dB
Isolation: RF1 - RF2
Return Loss
1000 MHz
2500 MHz
19
16
dB
dB
‘ON’ Switching Time
‘OFF’ Switching Time
Input 1 dB Compression
Input IP3
50% CTRL to 0.1 dB of final value, 1 GHz
50% CTRL to 25 dB isolation, 1 GHz
1000 MHz
0.725
0.625
+32
1.5
1.3
µs
µs
30
dBm
dBm
1000 MHz, 20 dBm input power
+53
Note: 1. Device linearity will begin to degrade below 10 MHz.
Document No. 70-0177-04 │ www.psemi.com
©2005 Peregrine Semiconductor Corp. All rights reserved.
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