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40CTQ045-N3 PDF预览

40CTQ045-N3

更新时间: 2024-11-25 07:47:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 164K
描述
Schottky Rectifier, 2 x 20 A

40CTQ045-N3 数据手册

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VS-40CTQ045PbF, VS-40CTQ045-N3  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 2 x 20 A  
FEATURES  
Base  
common  
cathode  
2
• 150 °C TJ operation  
• Very low forward voltage drop  
• High frequency operation  
• High  
purity,  
high  
temperature  
epoxy  
encapsulation for enhanced mechanical strength  
and moisture resistance  
Anode  
Anode  
2
Common  
cathode  
1
3
TO-220AB  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Compliant to RoHS Directive 2002/95/EC  
PRODUCT SUMMARY  
• Designed and qualified according to JEDEC-JESD47  
Package  
TO-220AB  
2 x 20 A  
45 V  
• Halogen-free according to IEC 61249-2-21 definition  
(-N3 only)  
IF(AV)  
VR  
DESCRIPTION  
VF at IF  
0.48 V  
This center tap Schottky rectifier has been optimized for  
very low forward voltage drop, with moderate leakage. The  
proprietary barrier technology allows for reliable operation  
up to 150 °C junction temperature. Typical applications are  
in switching power supplies, converters, freewheeling  
diodes, and reverse battery protection.  
I
RM max.  
115 mA at 125 °C  
150 °C  
TJ max.  
Diode variation  
EAS  
Common cathode  
20 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
40  
UNITS  
Rectangular waveform  
A
V
45  
tp = 5 μs sine  
1240  
A
VF  
20 Apk, TJ = 125 °C (per leg)  
Range  
0.48  
V
TJ  
- 55 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-40CTQ045PbF VS-40CTQ045-N3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
45  
45  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES UNITS  
per leg  
20  
40  
Maximum average forward current  
See fig. 5  
IF(AV)  
50 % duty cycle at TC = 116 °C, rectangular waveform  
per device  
A
Maximum peak one cycle non-repetitive  
surge current per leg  
See fig. 7  
5 µs sine or 3 µs rect. pulse  
10 ms sine or 6 ms rect. pulse  
1240  
Following any rated load  
condition and with rated  
IFSM  
V
RRM applied  
350  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 3 A, L = 4.4 mH  
20  
3
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
Revision: 26-Aug-11  
Document Number: 94212  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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