Datasheet > 400DR08

400DR08

更新时间： 2022-02-26 11:34:14

品牌	Logo	应用领域
尼尔 - NELLSEMI		/
页数	文件大小	规格书
8页	1220K
描述
Standard Recovery Diodes

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400DR08 数据手册

RoHS

400D(R)Series

SEMICONDUCTOR

Nell High Power Products

Fig.5 Maximum non-repetitive surge current

Fig.6 Maximum non-repetitive surge current

9000

8000

At any rated load condition and with

rated vrrm applied following surge.

Maximum non repetitive surge current

8000

7000

6000

5000

4000

3000

versus pulse train duration.

7000

lnitial T =190°C

lnitial T = 190°C,@50Hz

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

no voltage reapplied

rated vrrm reapplied

6000

5000

4000

3000

2000

1000

100

0.01

0.1

Pulse train duration (S)

Number of equal amplitude half cycle

current pulses(N)

Fig.7 Forward voltage drop characteristics

Fig.8 Thermal lmpedance Z_thJCcharacteristic

10000

Stead State Value

R_thJC= 0.15K/W

(DC Operation)

0.1

1000

= 25°C

0.01

= 190°C

100

0.001

0.01

0.1

Instantaneous forward voltage (V)

Square wave pulse duration (S)

ORDERING INFORMATION TABLE

Device code

400

Current rating, 400 = 400A

D = Standard Recovery Diode

None = Stud normal polarity (cathode to stud)

R = Stud reverse polarity (anode to stud)

Voltage code × 100 = V_RRM(see Voltage Ratings table)

None = DO-9, Ceramic housing type with insulated tube

B = DO-9, Glass-Metal Seal Type

C = DO-9, Ceramic housing type with insulated tube,

”inner pressure contact structure”

None = standard device, 3/4”-16UNF-2A

M = Metric device, M20 x 1.5 , with insulated tube

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