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3KP51C PDF预览

3KP51C

更新时间: 2024-11-18 20:04:03
品牌 Logo 应用领域
鲁光 - LGE 二极管
页数 文件大小 规格书
4页 1107K
描述
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3KP51C 技术参数

Case Style:R-6Ppk(W):3000
MIN_(V):56.70_MAX_(V):69.30
Vwm_(V):51Ir_(uA):2
Ippm_(A):32.93Vc_(V):91.1
class:Diodes

3KP51C 数据手册

 浏览型号3KP51C的Datasheet PDF文件第2页浏览型号3KP51C的Datasheet PDF文件第3页浏览型号3KP51C的Datasheet PDF文件第4页 
3KP Series  
Reverse Voltage: 5.0 to 440 V  
Peak Pulse Power: 3000 W  
Axial Lead  
Transient Voltage Suppressors  
Features  
R-6/P600  
Glass passivated chip  
3000 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate (duty  
cycle):0.01 %  
DIA.  
1.000 [25.40]  
MIN  
0.052 1.32  
Low leakage  
0.048  
[ ]  
1.22  
Uni and Bidirectional unit  
Excellent clamping capability  
Very fast response time  
0.360 9.14  
0.340 8.64  
RoHS compliant  
[
]
Mechanical Data  
Case: Molded plastic  
DIA.  
0.360 9.14  
0.340 8.64  
Epoxy: UL 94V-0 rate flame retardant  
[
]
Lead: Solderable per MIL-STD-202, method  
208 guranteed  
1.000 [25.40]  
MIN  
Polarity: Color band denotes cathode end  
Dimensions :  
inch [ mm ]  
except Bipolar  
Mounting position: Any  
Maximum Ratings(TA=25unless otherwise noted)  
Value  
Unit  
W
Parameter  
Symbol  
Peak power dissipation with a 10/1000μs waveform(1)  
PPP  
IPP  
PD  
3000  
See Next Table  
6.5  
Peak pulse current wih a 10/1000μs waveform(1)  
Power dissipation on infinite heatsink at TL = 75 °C  
Peak forward surge current, 8.3 ms single half sine-wave  
A
W
IFSM  
300  
A
unidirectional only(2)  
Maximum instantaneous forward voltage at 100 A for  
unidirectional only(3)  
VF  
3.5/5.0  
V
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to +150  
°C  
Note:  
(1)Non-repetitive current pulse per Fig.5 and derated above TA= 25 °C per Fig.1  
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
(3)VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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