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3EZ6.2D10 PDF预览

3EZ6.2D10

更新时间: 2024-11-14 03:35:11
品牌 Logo 应用领域
EIC 稳压二极管齐纳二极管测试
页数 文件大小 规格书
3页 41K
描述
SILICON ZENER DIODES

3EZ6.2D10 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.63
Is Samacsys:N配置:SINGLE
二极管类型:ZENER DIODE最大动态阻抗:1.5 Ω
元件数量:1最高工作温度:175 °C
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:3 W
标称参考电压:6.2 V子类别:Voltage Reference Diodes
表面贴装:NO处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:10%工作测试电流:121 mA
Base Number Matches:1

3EZ6.2D10 数据手册

 浏览型号3EZ6.2D10的Datasheet PDF文件第2页浏览型号3EZ6.2D10的Datasheet PDF文件第3页 
SILICON ZENER DIODES  
3EZ3.9D10 Series  
DO - 41  
VZ : 3.9 - 400 Volts  
PD : 3 Watts  
FEATURES :  
1.00 (25.4)  
* Complete Voltage Range 3.9 to 400 Volts  
* High peak reverse power dissipation  
* High reliability  
0.107 (2.7)  
MIN.  
0.080 (2.0)  
* Low leakage current  
0.205 (5.2)  
0.166 (4.2)  
* Pb / RoHS Free  
MECHANICAL DATA  
* Case : DO-41 Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
method 208 guaranteed  
1.00 (25.4)  
0.034 (0.86)  
MIN.  
0.028 (0.71)  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
* Weight : 0.339 gram  
Dimensions in inches and ( millimeters )  
MAXIMUM RATINGS  
Rating at 25 °C ambient temperature unless otherwise specified  
Rating  
Symbol  
Value  
3.0  
Unit  
W
PD  
DC Power Dissipation at TL = 75 °C (Note1)  
Maximum Forward Voltage at IF = 200 mA  
Maximum Thermal Resistance Junction to Ambient Air (Note2)  
Junction Temperature Range  
VF  
1.5  
V
60  
K / W  
°C  
RqJA  
TJ  
- 55 to + 175  
- 55 to + 175  
Storage Temperature Range  
Ts  
°C  
Note :  
(1) TL = Lead temperature at 3/8 " (9.5mm) from body  
(2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case.  
Fig. 1 Power Temperature Derating Curve  
5
L = LEAD LENGTH  
TO HEAT SINK  
4
3
2
L = 1/8"  
L = 3/8"  
Rev. 02 : April 1, 2005  
L = 1"  
1
0
0
40  
80  
120  
160  
200  
TL, LEAD TEMPERATURE (°C)  
Page 1 of 3  
Rev. 02 : April 1, 2005  

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