Datasheet > 3EZ39D5RL

3EZ39D5RL

更新时间： 2024-02-05 14:15:48

品牌	Logo	应用领域
安森美 - ONSEMI		测试二极管
页数	文件大小	规格书
8页	58K
描述
39V, 1W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41, PLASTIC, CASE 59-10, 2 PIN

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3EZ39D5RL 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	DO-41	包装说明：	O-PALF-W2
针数：	2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.57	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	ZENER DIODE	最大动态阻抗：	28 Ω
JEDEC-95代码：	DO-41	JESD-30 代码：	O-PALF-W2
JESD-609代码：	e0	元件数量：	1
端子数量：	2	最高工作温度：	200 °C
最低工作温度：	-65 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	1 W	认证状态：	Not Qualified
标称参考电压：	39 V	子类别：	Voltage Reference Diodes
表面贴装：	NO	技术：	ZENER
端子面层：	TIN LEAD	端子形式：	WIRE
端子位置：	AXIAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
最大电压容差：	5%	工作测试电流：	19 mA
Base Number Matches：	1

3EZ39D5RL 数据手册

3EZ4.3D5 Series

APPLICATION NOTE

Since the actual voltage available from a given zener

diode is temperature dependent, it is necessary to determine

junction temperature under any set of operating conditions

in order to calculate its value. The following procedure is

recommended:

DT is the increase in junction temperature above the lead

temperature and may be found from Figure 2 for a train of

power pulses (L = 3/8 inch) or from Figure 10 for dc power.

DT_JL= q_JLP_D

For worst-case design, using expected limits of I , limits

Lead Temperature, T , should be determined from:

of P and the extremes of T (DT ) may be estimated.

T_L= q_LAP_D+ T_A

Changes in voltage, V , can then be found from:

is the lead-to-ambient thermal resistance (°C/W) and

DV = q_VZDT_J

P is the power dissipation. The value for q will vary and

, the zener voltage temperature coefficient, is found

depends on the device mounting method. q is generally

from Figures 5 and 6.

30–40°C/W for the various clips and tie points in common

use and for printed circuit board wiring.

Under high power-pulse operation, the zener voltage will

vary with time and may also be affected significantly by the

zener resistance. For best regulation, keep current

excursions as low as possible.

Data of Figure 2 should not be used to compute surge

capability. Surge limitations are given in Figure 3. They are

lower than would be expected by considering only junction

temperature, as current crowding effects cause temperatures

to be extremely high in small spots resulting in device

degradation should the limits of Figure 3 be exceeded.

The temperature of the lead can also be measured using a

thermocouple placed on the lead as close as possible to the

tie point. The thermal mass connected to the tie point is

normally large enough so that it will not significantly

respond to heat surges generated in the diode as a result of

pulsed operation once steady-state conditions are achieved.

Using the measured value of T , the junction temperature

may be determined by:

T_J= T_L+ DT_JL

http://onsemi.com

1 2 3 456 7 8

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与3EZ39D5RL相关器件

型号	品牌	描述	获取价格	数据表
3EZ39D5RR1	ONSEMI	DIODE 39 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41, PLASTIC, CASE 59-	获取价格
3EZ39D5-T3	WTE	Zener Diode, 39V V(Z), 5%, 3W, Silicon, Unidirectional, DO-15,	获取价格
3EZ39D5-T3-LF	WTE	Zener Diode, 39V V(Z), 5%, 3W, Silicon, Unidirectional, DO-15,	获取价格
3EZ39D5TA	MOTOROLA	Zener Diode, 39V V(Z), 5%, 1W, Silicon, Unidirectional, DO-41, GLASS, CASE 59-03, 2 PIN	获取价格
3EZ39D5-TB-LF	WTE	Zener Diode, 39V V(Z), 5%, 3W, Silicon, Unidirectional, DO-15,	获取价格
3EZ39D5-TP	MCC	Zener Diode, 39V V(Z), 5%, 3W, Silicon, Unidirectional, DO-15, ROHS COMPLIANT, PLASTIC PAC	获取价格

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