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369AA-01

更新时间： 2024-11-20 07:45:27
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 108K
描述
Power MOSFET 30V, 7 m, 89A, Single N?Channel SO8FL

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369AA-01 数据手册

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NVMFS4841N  
Power MOSFET  
30V, 7 mW, 89A, Single N−Channel SO8FL  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
http://onsemi.com  
G
• AEC−Q101 Qualified  
• These are Pb−Free Devices*  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
7.0 mW @ 10 V  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
30 V  
89 A  
J
11.4 mW @ 4.5 V  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
30  
Unit  
V
V
DSS  
Gate−to−Source Voltage  
V
"20  
89  
V
D (5,6)  
GS  
Continuous Drain Cur-  
T
= 25°C  
I
A
mb  
D
rent R  
(Notes 1,  
Y
J−mb  
T
mb  
= 100°C  
63  
2, 3, 4)  
Steady  
State  
Power Dissipation  
T
mb  
= 25°C  
P
112  
56  
W
A
D
G (4)  
R
(Notes 1, 2, 3)  
Y
J−mb  
T
mb  
= 100°C  
Continuous Drain Cur-  
T = 25°C  
I
16  
A
D
S (1,2,3)  
N−CHANNEL MOSFET  
rent R  
3, 4)  
(Notes 1 &  
q
JA  
T = 100°C  
A
11  
Steady  
State  
Power Dissipation  
(Notes 1, 3)  
T = 25°C  
P
3.7  
1.8  
336  
80  
W
A
D
R
q
JA  
MARKING  
DIAGRAM  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
A
p
D
Current limited by package  
(Note 4)  
T = 25°C  
I
DmaxPkg  
A
S
S
S
G
D
D
1
V4841  
AYWWG  
G
Operating Junction and Storage Temperature  
T , T  
J
−55 to  
175  
°C  
SO−8 FLAT LEAD  
CASE 488AA  
STYLE 1  
stg  
D
Source Current (Body Diode)  
I
51  
A
S
Single Pulse Drain−to−Source Avalanche  
E
180  
mJ  
AS  
A
Y
= Assembly Location  
= Year  
= Work Week  
Energy (T = 25°C, V = 24 V, V = 10 V,  
J
DD  
GS  
I
= 19 A, L = 1.0 mH, R = 25 W)  
L(pk)  
G
WW  
G
= Pb−Free Package  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
(Note: Microdot may be in either location)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
NVMFS4841NT1G  
SO−8FL  
(Pb−Free)  
1500 /  
Tape & Reel  
Parameter  
Symbol  
Value  
Unit  
Junction−to−Mounting Board (top) − Steady  
State (Note 2, 3)  
R
1.3  
°C/W  
Y
J−mb  
NVMFS4841NT3G  
SO−8FL  
(Pb−Free)  
5000 /  
Tape & Reel  
Junction−to−Ambient − Steady State (Note 3)  
R
41  
q
JA  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
*For additional information on our Pb−Free strategy and  
soldering details, please download the ON  
Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
4. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
December, 2010 − Rev. 0  
NVMFS4841N/D  
 
123456

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