Datasheet > 320P14-U

320P14-U

更新时间： 2024-11-25 12:56:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管 PC
页数	文件大小	规格书
5页	99K
描述
4 Matched NPN Transistors

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320P14-U 数据手册

Low-Noise Matched

Transistor Array ICs

THAT 300 Series

FEATURES

APPLICATIONS

•4 Matched NPN Transistors

•Low Noise Front Ends

º 300 typical h_feof 100

º 300A minimum h_feof 150

º 300B minimum h_feof 300

•Microphone Preamplifiers

•Log/Antilog Amplifiers

•Current Sources

•4 Matched PNP Transistors

º 320 typical h_feof 75

•2 Matched PNP and 2 Matched NPN

Transistors

º 340 PNP typical h_feof 75

º 340 NPN typical h_feof 100

•Low Voltage Noise

º 0.75 nV/ √Hz (PNP)

º 0.8 nV/ √Hz (NPN)

•High Speed

•Current Mirrors

º f_T= 350 MHz (NPN)

º f_T= 325 MHz (PNP)

•500 μV matching between devices

•Dielectrically Isolated for low crosstalk

and high DC isolation

•Multipliers

•36V V_CEO

Description

The THAT 300, 320 and 340 are large

geometry, 4-transistor, monolithic NPN and/or PNP

arrays. They exhibit both high speed and low noise,

with excellent parameter matching between transis-

tors of the same gender. Typical base-spreading

resistance is 25 Ω for the PNP devices (30 Ω for the

low-gain NPNs), so their resulting voltage noise is

under 1 nV/√Hz. This makes the 300 series ideally

suited for low-noise amplifier input stages, log ampli-

fiers, and many other applications. The four-NPN

transistor array is available in versions selected for

h_fewith minimums of 150 (300A) or 300 (300B).

used in conventional arrays). As a result, they exhibit

inter-device crosstalk and DC isolation similar to

that of discrete transistors. The resulting low

collector-to-substrate capacitance produces a typical

NPN f_Tof 350 MHz (325 MHz for the PNPs).

Substrate biasing is not required for normal opera-

tion, though the substrate should be ac-grounded to

optimize speed and minimize crosstalk.

An eight-transistor bare-die array with similar

performance characteristics (the THAT 380G) is also

available from THAT Corporation. Please contact us

directly or through your local distributor for more

information. Military-grade temperature range

packages are available from TT Semiconductor (see

www.ttsemiconductor.com for more information).

Fabricated in a dielectrically isolated, comple-

mentary bipolar process, each transistor is electri-

cally insulated from the others by

a layer of

insulating oxide (not the reverse-biased PN junctions

Part Number

Configuration

4-Matched NPN Transistors, Beta = 60 min.

Package

DIP14

SO14

DIP14

SO14

DIP14

SO14

300P14-U

300S14-U

300AS14-U

300BS14-U

320P14-U

320S14-U

340P14-U

340S14-U

4-Matched NPN Transistors, Beta = 150 min.

4-Matched NPN Transistors, Beta = 300 min.

4-Matched PNP Transistors

2-Matched NPN Transistors and

2-Matched PNP Transistors

Table 1. Ordering Information

THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA

Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com

12 3 4 5

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与320P14-U相关器件

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320PJT200A	INFINEON	获取价格	Gate Turn-Off SCR, 320000mA I(T), 2000V V(DRM)
320PJT250	INFINEON	获取价格	Gate Turn-Off SCR, 320000mA I(T), 2500V V(DRM)
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320RF	IRI	获取价格	POWER DIODE
320RF120	IRI	获取价格	POWER DIODE
320RF160	IRI	获取价格	POWER DIODE
320RF180	IRI	获取价格	POWER DIODE
320RF40	IRI	获取价格	POWER DIODE
320RG	IRI	获取价格	POWER DIODE

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