5秒后页面跳转
30WQ03FNTRL-M3 PDF预览

30WQ03FNTRL-M3

更新时间: 2024-11-27 07:42:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 129K
描述
Schottky Rectifier, 3.5 A

30WQ03FNTRL-M3 数据手册

 浏览型号30WQ03FNTRL-M3的Datasheet PDF文件第2页浏览型号30WQ03FNTRL-M3的Datasheet PDF文件第3页浏览型号30WQ03FNTRL-M3的Datasheet PDF文件第4页浏览型号30WQ03FNTRL-M3的Datasheet PDF文件第5页浏览型号30WQ03FNTRL-M3的Datasheet PDF文件第6页浏览型号30WQ03FNTRL-M3的Datasheet PDF文件第7页 
VS-30WQ03FN-M3  
Vishay Semiconductors  
Schottky Rectifier, 3.5 A  
FEATURES  
• Low forward voltage drop  
Base  
cathode  
4, 2  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Halogen-free according to IEC 61249-2-21  
definition  
1
3
D-PAK (TO-252AA)  
Anode  
Anode  
• Popular D-PAK outline  
• Small foot print, surface mountable  
• High frequency operation  
PRODUCT SUMMARY  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
Package  
D-PAK (TO-252AA)  
3.5 A  
IF(AV)  
• Compliant to RoHS Directive 2002/95/EC  
VR  
30 V  
VF at IF  
IRM  
See Electrical table  
50 mA at 125 °C  
150 °C  
DESCRIPTION  
The VS-30WQ03FN-M3 surface mount Schottky rectifier  
has been designed for applications requiring low forward  
drop and small foot prints on PC board. Typical applications  
are in disk drives, switching power supplies, converters,  
freewheeling diodes, battery charging, and reverse battery  
protection.  
TJ max.  
Diode variation  
EAS  
Single die  
8 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
3.5  
UNITS  
Rectangular waveform  
A
V
30  
tp = 5 μs sine  
3 Apk, TJ = 125 °C  
Range  
535  
A
VF  
0.35  
V
TJ  
- 40 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-30WQ03FN-M3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
VR  
30  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
50 % duty cycle at TC = 134 °C, rectangular waveform  
3.5  
A
Maximum peak one cycle non-repetitive  
surge current  
See fig. 7  
Following any rated load  
condition and with rated  
5 μs sine or 3 μs rect. pulse  
535  
IFSM  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 2 A, L = 4 mH  
90  
VRRM applied  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
8
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1.0  
Document Number: 93296  
Revision: 03-Nov-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

与30WQ03FNTRL-M3相关器件

型号 品牌 获取价格 描述 数据表
30WQ03FNTRLPBF VISHAY

获取价格

Schottky Rectifier, 3.5 A
30WQ03FNTR-M3 VISHAY

获取价格

Schottky Rectifier, 3.5 A
30WQ03FNTRPBF VISHAY

获取价格

Schottky Rectifier, 3.5 A
30WQ03FNTRR VISHAY

获取价格

Schottky Rectifier, 3.5 A
30WQ03FNTRR-M3 VISHAY

获取价格

Schottky Rectifier, 3.5 A
30WQ03FNTRRPBF VISHAY

获取价格

Schottky Rectifier, 3.5 A
30WQ03FTRL INFINEON

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3.3A, 30V V(RRM), Silicon
30WQ03FTRLPBF INFINEON

获取价格

暂无描述
30WQ03FTRR INFINEON

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3.3A, 30V V(RRM), Silicon
30WQ03FTRRPBF INFINEON

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3.3A, 30V V(RRM), Silicon,