VS-30WQ03FNPbF
Vishay Semiconductors
Schottky Rectifier, 3.5 A
FEATURES
Base
cathode
• Popular D-PAK outline
4, 2
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
1
3
D-PAK (TO-252AA)
Anode
Anode
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
Package
D-PAK (TO-252AA)
3.5 A
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
IF(AV)
VR
30 V
DESCRIPTION
VF at IF
IRM
See Electrical table
50 mA at 125 °C
150 °C
The VS-30WQ03FNPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and small foot prints on PC board. Typical applications
are in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
TJ max.
Diode variation
EAS
Single die
8 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
3.5
UNITS
Rectangular waveform
A
V
30
tp = 5 μs sine
3 Apk, TJ = 125 °C
Range
535
A
VF
0.35
V
TJ
- 40 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-30WQ03FNPbF
UNITS
Maximum DC reverse voltage
VR
30
V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum average forward current
See fig. 5
IF(AV)
50 % duty cycle at TC = 134 °C, rectangular waveform
3.5
A
Maximum peak one cycle non-repetitive
surge current
See fig. 7
Following any rated load
condition and with rated
5 μs sine or 3 μs rect. pulse
535
IFSM
10 ms sine or 6 ms rect. pulse
TJ = 25 °C, IAS = 2 A, L = 4 mH
90
VRRM applied
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
8
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1.0
Document Number: 94197
Revision: 14-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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