Datasheet > 30PT10C

30PT10C

更新时间： 2022-09-18 13:56:05

品牌	Logo	应用领域
尼尔 - NELLSEMI		可控硅
页数	文件大小	规格书
6页	885K
描述
Stansard SCRs, 30A

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数据手册

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30PT10C 数据手册

RoHS

30PT Series _RoHS

SEMICONDUCTOR

ELECTRICAL SPECIFICATIONS

(T_J= 25 ºC unless otherwise specified)

SYMBOL

TEST CONDITIONS

30PTxxxx

Unit

Min.

I_GT

V_D= 12V, R_L= 33Ω

V_GT

Max.

1.3

0.2

T_j= 125°C

V_GD

V_D= V_DRM, R_L= 3.3KΩ, R_GK= 220Ω

Min.

Max.

Typ.

I_H

I_L

I_T= 500mA, Gate open

I_G= 1.2×I_GT

V_DRM≤ 800V

V_DRM≥ 1000V

500

V_D= 67% V_DRMGate open

T_j= 125°C

V/µs

dV/dt

Min.

250

1.6

T_j= 25°C

T_j= 125°C

V_TM

I_T= 60A, t_P= 380µs

Max.

µA

V_D=V_DRM, V_R=V_RRM

R_GK= 220Ω

I_DRM

I_RRM

Threshold Voltage

V_to

R_d

1.27

Dynamic Resistance

mΩ

THERMAL RESISTANCE

VALUE

SYMBOL

Parameter

UNIT

D²PAK/TO-220AB/TO-3P/TO-247AB

TO-3P insulated

1.0

1.2

2.0

R_th(j-c)

Junction to case (DC)

°C/W

TO-220AB insulated

TO-263(D²PAK)

S = 1 cm²

R_th(j-a)

Junction to ambient

TO-220AB/TO-220AB insulated

TO-3P/TO-247AB/TO-3P insulated

°C/W

S=Copper surface under tab

PRODUCT SELECTOR

VOLTAGE (xx)

PART NUMBER

SENSITIVITY

PACKAGE

800 V

1200 V

600 V

1000 V

1600 V

30PTxxA/30PTxxAl

30PTxxH

50 mA

TO-220AB

D²PAK

TO-3P

30PTxxB/30PTxxBI

30PTxxC

TO-247AB

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