Datasheet > 30NM65

30NM65

更新时间： 2023-12-06 20:08:55

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友顺 - UTC		/
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描述
N-CH

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30NM65 数据手册

30NM65

Power MOSFET



ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

I_D=250µA, V_GS=0V

V_DS=650V, V_GS=0V

V_GS=+30V, V_DS=0V

V_GS=-30V, V_DS=0V

650

2.5

µA

Forward

Reverse

+100 nA

-100 nA

Gate- Source Leakage Current

I_GSS

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250µA

V_GS=10V, I_D=15A

4.5

Static Drain-Source On-State Resistance

DYNAMIC PARAMETERS

Input Capacitance

0.14

ꢀ

C_ISS

C_OSS

C_RSS

2575

1435

V_GS=0V, V_DS=25V, f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge (Note 1)

Gate to Source Charge

Gate to Drain Charge

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

77.2

18.8

30.8

V_DS=200V, V_GS=10V, I_D=30A,

I_G=1mA (Note 1,2)

Turn-ON Delay Time (Note 1)

Rise Time

V_DD=30V, I_D=0.5A, R_G=25ꢀ,

270

695

400

V_GS=10V (Note 1,2)

Turn-OFF Delay Time

Fall-Time

t_D(OFF)

t_F

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

I_S

I_SM

V_SD

t_rr

Drain-Source Diode Forward Voltage (Note 1)

Body Diode Reverse Recovery Time (Note 1)

Body Diode Reverse Recovery Charge

I_S=30A, V_GS=0V

I_S=30A, V_GS=0V,

dI_F/dt=100A/µs

1.4

540

µC

Q_rr

10.5

Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.

2. Essentially independent of operating ambient temperature.

UNISONIC TECHNOLOGIES CO., LTD

3 of 8

QW-R205-210.D

www.unisonic.com.tw

1 234 5 6 7 8

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