Datasheet > 30N06G-TA3-T

30N06G-TA3-T

更新时间： 2022-09-18 13:55:36

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
8页	304K
描述
60V, 30A N-CHANNEL POWER MOSFET

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30N06G-TA3-T 数据手册

30N06

Power MOSFET

ELECTRICAL CHARACTERISTICS (T_C= 25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

V_GS= 0 V, I_D= 250 μA

V_DS= 60 V, V_GS= 0 V

V_GS= 20V, V_DS= 0 V

μA

Forward

Reverse

100 nA

-100 nA

V/℃

Gate-Source Leakage Current

I_GSS

V_GS= -20V, V_DS= 0 V

I_D=250μA, Referenced to 25℃

△BV_DSS/△T_J

Breakdown Voltage Temperature Coefficient

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

Input Capacitance

0.06

V_GS(TH)

R_DS(ON)

V_DS= V_GS, I_D= 250 μA

2.0

4.0

V_GS= 10 V, I_D= 15 A

mΩ

C_ISS

C_OSS

C_RSS

800

300

V_GS= 0 V, V_DS= 25 V,

f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Delay Time

t_D(ON)

t_R

t_D(OFF)

t_F

Turn-On Rise Time

V_DD= 30V, I_D=15 A, V_GS=10V

(Note 1, 2)

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_G

V_DS= 60V, V_GS= 10 V,

I_D= 24A (Note 1, 2)

Gate-Source Charge

Q_GS

Q_GD

Gate-Drain Charge

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

Maximum Continuous Drain-Source Diode

Forward Current

V_SD

V_GS= 0 V, I_S= 30A

1.4

I_S

Maximum Pulsed Drain-Source Diode

Forward Current

I_SM

120

Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD

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QW-R502-087.E

www.unisonic.com.tw

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