Datasheet > 30N06V-Q

30N06V-Q

更新时间： 2022-02-26 11:54:56

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
6页	205K
描述
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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30N06V-Q 数据手册

UNISONIC TECHNOLOGIES CO., LTD

30N06V-Q

Preliminary

Power MOSFET

60V, 30A N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 30N06V-Q is a low voltage power MOSFET and is

designed to have better characteristics, such as fast switching time,

low gate charge, low on-state resistance and excellent avalanche

characteristics. This power MOSFET is usually used at automotive

applications in power supplies, high efficient DC to DC converters

and battery operated products.



FEATURES

* R_DS(ON)< 40mΩ@V_GS= 10 V, I_D=15A

* Fast switching capability

* Avalanche energy specified



SYMBOL

 ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

TO-251

Packing

Tube

Lead Free

Halogen Free

30N06VG-TM3-T

30N06VL-TM3-T

Note: Pin Assignment: G: Gate D: Drain S: Source

www.unisonic.com.tw

1 of 6

QW-R502-A29. a

12 3 4 5 6

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