30KPA108AB

更新时间： 2023-03-15 00:00:00

品牌	Logo	应用领域
力特 - LITTELFUSE		二极管电视瞬态抑制器
页数	文件大小	规格书
6页	915K
描述
30000W, UNIDIRECTIONAL, SILICON, TVS DIODE, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-2

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30KPA108AB 数据手册

TransientVoltage Suppression Diodes

Axial Leaded – 30000W > 30KPA series

RoHS

30KPA Series

Description

Uni-directional

The 30KPA Series is designed speciﬁcally to protect

sensitive electronic equipment from voltage transients

induced by lightning and other transient voltage events.

Features

Bi-directional

• V_BR@T_J= V_BR@25°C × (1+αT • ESD protection of data

lines in accordance with

IEC 61000-4-2 (IEC801-2)

x (T_J- 25))

(αT:Temperature Coefﬁcient)

• EFT protection of data

lines in accordance with

IEC 61000-4-4 (IEC801-4)

• Low incremental surge

resistance

• Glass passivated chip

junction in P600 package

• 30000W peak pulse

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

• Fast response time:

typically less than 1.0ps

from 0 Volts to BV min

Agency Approvals

AGENCY

AGENCY FILE NUMBER

E230531

• Typical I_Rless than 2μA

above 73V

• High temperature

soldering guaranteed:

260°C/40 seconds /

0.375”,(9.5mm) lead

length, 5 lbs., (2.3kg)

tension

• Plastic package has

underwriters laboratory

ﬂammability classiﬁcation

94V-O

Maximum Ratings andThermal Characteristics

(T_A=25°C unless otherwise noted)

• Excellent clamping

capability

•Typical failure mode is

short from over-speciﬁed

voltage or current

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

• IEC-61000-4-2 ESD

Parameter

Symbol

P_PPM

Value

Unit

Peak Pulse Power Dissipation by

10/1000μsTest Waveform (Fig.1)

(Note 1)

30000

Steady State Power Dissipation on

Iniﬁnite Heat Sink atT_L=75ºC (Fig. 5)

P_D

8.0

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave Unidirectional

Only (Note 2)

I_FSM

400

15kV(Air), 8kV (Contact)

Operating Junction and Storage

Temperature Range

T_J, T_STG-55 to 150

°C

TypicalThermal Resistance Junction

to Lead

Applications

R_uJL

R_uJA

8.0

°C/W

TVS devices are ideal for the protection of I/O interfaces,

_CCbus and other vulnerable circuits used in telecom,

TypicalThermal Resistance Junction

to Ambient

computer, industrial and consumer electronic applications.

Notes:

1. Non-repetitive current pulse , per Fig. 4 and derated aboveT_A= 25°C per Fig. 3.

2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per

minute maximum.

Additional Information

Functional Diagram

Datasheet

Resources

Samples

Bi-directional

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 01/24/14

12 3 4 5 6

中文翻译

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与30KPA108AB相关器件

型号	品牌	获取价格	描述	数据表
30KPA108A-B	LITTELFUSE	获取价格	Transient Voltage Suppression Diodes
30KPA108AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 108V V(RWM), Unidirectional, 1 Element, Silicon, H
30KPA108AE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 108V V(RWM), Unidirectional, 1 Element, Silicon, R
30KPA108A-HR	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 30000W, 108V V(RWM), Unidirectional, 1 Element, Silicon,
30KPA108A-HRA	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 30000W, 108V V(RWM), Unidirectional, 1 Element, Silicon, H
30KPA108ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 108V V(RWM), Unidirectional, 1 Element, Silicon, P
30KPA108ATRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 108V V(RWM), Unidirectional,
30KPA108C	RFE	获取价格	Trans Voltage Suppressor Diode, 30000W, 108V V(RWM), Bidirectional, 1 Element, Silicon, RO
30KPA108C	LITTELFUSE	获取价格	30KPA系列可专门用于保护敏感电子设备，使其免受雷击和其他瞬态电压事件引起的瞬态电压影响
30KPA108C	NJSEMI	获取价格	Diode TVS Single Bi-Dir 108V 30KW 2-Pin Case P600 T/R

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