Datasheet > 30KP70CAE3TR

30KP70CAE3TR

更新时间： 2024-11-21 06:52:15

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
3页	156K
描述
Trans Voltage Suppressor Diode, 30000W, 70V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-2

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30KP70CAE3TR 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	PLASTIC PACKAGE-2	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.22
最大击穿电压：	86 V	最小击穿电压：	77.8 V
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	O-PALF-W2	JESD-609代码：	e3
湿度敏感等级：	1	最大非重复峰值反向功率耗散：	30000 W
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	BIDIRECTIONAL	最大功率耗散：	1.61 W
认证状态：	Not Qualified	最大重复峰值反向电压：	70 V
表面贴装：	NO	技术：	AVALANCHE
端子面层：	MATTE TIN	端子形式：	WIRE
端子位置：	AXIAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

30KP70CAE3TR 数据手册

30KP33 thru 30KP400CA, e3

30kW Transient Voltage Suppressor

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These Microsemi 30 kW Transient Voltage Suppressors (TVSs) are

designed for applications requiring protection of voltage-sensitive electronic

devices that may be damaged by harsh or severe voltage transients

including lightning per IEC61000-4-5 and class levels with various source

impedances described herein. This series is available in 33 to 400 volt

standoff voltages (V_WM) in both unidirectional and bi-directional with either

5% or 10% tolerances of the Breakdown Voltage (V_BR). Microsemi also

offers numerous other TVS products to meet higher or lower power

demands and special applications.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Available in both Unidirectional and Bidirectional

construction (Bidirectional with C or CA suffix)

•

Protection from switching transients and induced RF

Protection from ESD, and EFT per IEC 61000-4-2 and

IEC 61000-4-4

•

Selections for 33 to 400 volt standoff voltages V_WM

Suppresses transients up to 30 kW @ 10/1000 µs and

200 kW @ 8/20 µs (see Figure 1)

•

Secondary lightning protection per IEC61000-4-5 with

42 Ohms source impedance:

Class 1,2,3,4: 30KP33A - 30KP400A or CA

•

Fast response

Class 5: 30KP33A - 30KP400A or CA (short distance)

Class 5: 30KP33A - 30KP220A or CA (long distance)

Optional 100% screening for avionics grade is

available by adding MA prefix to part number for

added 100% temperature cycle -55^oC to +125^oC

(10X) as well as surge (3X) and 24 hours HTRB with

post test V_Z& I_R(in the operating direction for

unidirectional or both directions for bidirectional)

•

Secondary lightning protection per IEC61000-4-5 with

12 Ohms source impedance:

Class 1,2, 3: 30KP33A to 30KP400A or CA

Class 4: 30KP33A to 30KP220A or CA

•

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, JANTXV, and JANS are

available by adding MQ, MX, MV, or MSP prefixes

respectively to part numbers.

Secondary lightning protection per IEC61000-4-5 with

2 Ohms source impedance:

Class 2: 30KP33A to 30KP400A or CA

Class 3: 30KP33 to 30KP220A or CA

Class 4: 30KP33 to 30KP110A or CA

•

Moisture classification is Level 1 with no dry pack

required per IPC/JEDEC J-STD-020B

RoHS Compliant devices available by adding “e3” suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Peak Pulse Power dissipation at 25^ºC: 30,000 watts

•

CASE: Void-free transfer molded thermosetting

epoxy body meeting UL94V-0

at 10/1000 μs (also see Figures 1 and 2)

•

Impulse repetition rate (duty factor): 0.05%

FINISH: Tin-Lead or RoHS compliant annealed

matte-Tin plating readily solderable per MIL-STD-

750, method 2026

_clamping(0 volts to V_(BR)min.): < 100 ps theoretical for

unidirectional and < 5 ns for bidirectional

Operating & Storage temperature: -65^ºC to +150^ºC

Thermal resistance: 17.5^ºC/W junction to lead, or

77.5^ºC/W junction to ambient when mounted on FR4

PC board with 4 mm²copper pads (1oz) and track

width 1 mm, length 25 mm

•

MARKING: Body marked with part number

•

POLARITY: Band denotes cathode. Bidirectional not

marked for polarity

•

WEIGHT: 1.7 grams (approximate)

TAPE & REEL option: Standard per EIA-296 for axial

package (add “TR” suffix to part number)

•

Steady-State Power dissipation: 7 watts at T_L=

27.5^oC, or 1.61 watts at T_A= 25^ºC when mounted on

FR4 PC board described for thermal resistance

•

See package dimension on last page

•

Forward Surge: 250 Amps 8.3 ms half-sine wave for

unidirectional devices only

Solder temperatures: 260 ^ºC for 10 s (maximum)

8-21-2007 REV K

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

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与30KP70CAE3TR相关器件

型号	品牌	获取价格	描述	数据表
30KP70CA-T3	WTE	获取价格	Trans Voltage Suppressor Diode, 30000W, 70V V(RWM), Bidirectional, 1 Element, Silicon,
30KP70CA-TP	MCC	获取价格	Trans Voltage Suppressor Diode, 30000W, 70V V(RWM), Bidirectional, 1 Element, Silicon, ROH
30KP70CA-TP-HF	MCC	获取价格	Trans Voltage Suppressor Diode, 30000W, 70V V(RWM), Bidirectional, 1 Element, Silicon,
30KP70CE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 70V V(RWM), Bidirectional, 1 Element, Silicon, PLA
30KP70CHR	DIGITRON	获取价格	Trans Voltage Suppressor Diode
30KP70S	LGE	获取价格	Glass passivated junction chip
30KP70SA	LGE	获取价格	Glass passivated junction chip
30KP70SC	LGE	获取价格	Glass passivated junction chip
30KP70SCA	LGE	获取价格	Glass passivated junction chip
30KP70-TP	MCC	获取价格	暂无描述

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