Datasheet > 30KP160A

30KP160A

更新时间： 2024-11-30 06:21:23

品牌	Logo	应用领域
MDE		/
页数	文件大小	规格书
3页	26K
描述
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

30KP160A 数据手册

MDE Semiconductor, Inc.

78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414

1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com

30KP SERIES

GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

VOLTAGE-30.0 TO 400 Volts

30000 Watt Peak Pulse Power

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

• Glass passivated junction

P-600

• 30000W Peak Pulse Power

capability on 10/1000 µs waveform

• Excellent clamping capability

1.0(25.4) MIN

• Repetition rate (duty cycle):0.05%

• Low incremental surge resistance

• Fast response time: typically less

than 1.0 ps from 0 volts to BV

.360(9.1)

.340(8.6)

DIA

.360(9.1)

.340(8.6)

• Typical Id less than 1µA above 10V

• High temperature soldering guaranteed:

265°C/10 seconds/.375", (9.5mm) lead

length, 5lbs., (2.3kg) tension

.052(1.3)

.048(1.2)

DIA

1.0(25.4) MIN

MECHANICAL DATA

Case:Molded plastic over glass passivated junction

Terminals: Plated Axial leads, solderable per

MIL-STD-750, Method 2026

Dimensions in inches (milimeters)

Polarity: Color band denoted positive end (cathode)

except Bipolar

Mounting Position: Any

Weight: 0.07 ounce, 2.1 gram

DEVICES FOR BIPOLAR APPLICATIONS

For Bidirectional use C or CA Suffix for types 30KP30 thru types 30KP400

Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

RATING

SYMBOL

VALUE

UNITS

Peak Pulse Power Dissipation on 10/1000 µs

P_PPM

Minimum 30000

Watts

waveform (NOTE 1)

Peak Pulse Current of on 10-1000 µs waveform

(NOTE 1)

I_PPM

SEE TABLE 1

8.0

Amps

Watts

Steady State Power Dissipation at Tl=75 °C

Lead Lengths.375", (9.5mm)(NOTE 2)

P_M(AV)

Peak Forward Surge Current, 8.3ms Sine-Wave

Superimposed on Rated Load, (JEDEC Method)

(NOTE 3)

I_FSM

400.0

Amps

°C

Operatings and Storage Temperature Range

NOTES:

T_J, T_STG

-55 to +175

1.Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.

2.Mounted on Copper Pad area of 0.8x0.8" (20x20mm) per Fig.5.

3.8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum

Certified RoHS Compliant

UL File # E223026

12 3

中文翻译

下载PDF

与30KP160A相关器件

型号	品牌	获取价格	描述	数据表
30KP160A-PBF	DIGITRON	获取价格	Trans Voltage Suppressor Diode
30KP160ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 160V V(RWM), Unidirectional, 1 Element, Silicon, P
30KP160C	NJSEMI	获取价格	TRANSIENT VOLTAGE SUPPRESSOR
30KP160CA	MCC	获取价格	30000 Watts Transient Voltage Suppressor 28 to 288 Volt
30KP160CA	NJSEMI	获取价格	TRANSIENT VOLTAGE SUPPRESSOR
30KP160CA	MDE	获取价格	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
30KP160CA	WON-TOP	获取价格	Axial
30KP160CA	RECTRON	获取价格	Package / Case : R-6;Mounting Style : Through Hole;Power Rating : 30000 W;Polarity : Bidir
30KP160CA-BP	MCC	获取价格	暂无描述
30KP160CAE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 160V V(RWM), Bidirectional, 1 Element, Silicon, PL

与30KP160A相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

30KP160A

30KP160A 数据手册

与30KP160A相关器件

与30KP160A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

30KP160A

30KP160A 数据手册

与30KP160A相关器件

与30KP160A相关文章

您还可以找

您在本页遇到什么问题？