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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| 30FQ045E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 45V V(RRM), Silicon, DO-203AA, DO-4, 1 |
|
| 30FQ-A | INFINEON |
获取价格 |
30Amp Schottky Power Rectifiers |
|
| 30FR060P | DCCOM |
获取价格 |
TECHNICAL SPECIFICATIONS OF FAST RECOVERY EPITAXIAL DIODE VOLTAGE RANGE - 600 Volts |
|
| 30-FT07NIA320RV-LE06F68 | VINCOTECH |
获取价格 |
IGBT fast High efficiency in hard switching and resonant topologies High speed switching |
|
| 30-FT07NIA450S501-PD68F58 | VINCOTECH |
获取价格 |
High speed and smooth switching;Low gate charge;Very low collector emitter saturation volt |
|
| 30-FT07NIA600S501-PD60F58 | VINCOTECH |
获取价格 |
High speed and smooth switching;Low gate charge;Very low collector emitter saturation volt |
|
| 30-FT07NIB200S502-LE04F58 | VINCOTECH |
获取价格 |
High speed and smooth switching;Low gate charge;Very low collector emitter saturation volt |
|
| 30-FT07NIB200SG02-L965F08 | VINCOTECH |
获取价格 |
High speed switching;Low EMI;Low turn-off losses;Low collector emitter saturation voltage |
|
| 30-FT07NIB300S502-LE06F58 | VINCOTECH |
获取价格 |
High speed and smooth switching;Low gate charge;Very low collector emitter saturation volt |
|
| 30-FT07NIB300S503-LH36F58 | VINCOTECH |
获取价格 |
High speed and smooth switching;Low gate charge;Very low collector emitter saturation volt |
|
塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
英特尔震撼发布：128核心256线程的至强6性能核处理器
SK海力士量产12层HBM3E，容量高达36GB
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
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