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30CTQ100GSTRRP PDF预览

30CTQ100GSTRRP

更新时间: 2024-01-12 16:42:18
品牌 Logo 应用领域
威世 - VISHAY 高功率电源二极管
页数 文件大小 规格书
6页 111K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3

30CTQ100GSTRRP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-263包装说明:R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.48其他特性:FREE WHEELING DIODE, HIGH RELIABILITY
应用:HIGH POWER外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.69 V
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:650 A
元件数量:2相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:100 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

30CTQ100GSTRRP 数据手册

 浏览型号30CTQ100GSTRRP的Datasheet PDF文件第1页浏览型号30CTQ100GSTRRP的Datasheet PDF文件第2页浏览型号30CTQ100GSTRRP的Datasheet PDF文件第3页浏览型号30CTQ100GSTRRP的Datasheet PDF文件第5页浏览型号30CTQ100GSTRRP的Datasheet PDF文件第6页 
30CTQ...GSPbF, 30CTQ...G-1PbF  
Schottky Rectifier, 2 x 15 A  
Vishay High Power Products  
180  
7
6
5
4
3
2
1
0
D = 0.20  
D = 0.25  
D = 0.33  
D = 0.50  
D = 0.75  
170  
DC  
160  
RMS limit  
150  
140  
Square wave (D = 0.50)  
80 % rated VR applied  
130  
DC  
120  
110  
See note (1)  
100  
0
2
4
6
8
10  
12  
0
2
4
6
8
10  
12  
14  
IF (AV) - Average Forward Current (A)  
IF (AV) - Average Forward Current (A)  
Fig. 6 - Forward Power Loss Characteristics (Per Leg)  
Fig. 5 - Maximum Allowable Case Temperature vs.  
Average Forward Current (Per Leg)  
1000  
At any rated load condition  
and with rated VRRM applied  
following surge  
100  
10  
100  
1000  
10 000  
VR - Square Wave Pulse Duration (µs)  
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)  
L
High-speed  
switch  
IRFP460  
D.U.T.  
Freewheel  
diode  
Rg = 25 Ω  
Vd = 25 V  
+
Current  
monitor  
40HFL40S02  
Fig. 8 - Unclamped Inductive Test Circuit  
Note  
(1)  
Formula used: TC = TJ - (Pd + PdREV) x RthJC  
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);  
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 10 V  
www.vishay.com  
4
For technical questions, contact: diodestech@vishay.com  
Document Number: 94191  
Revision: 09-Sep-09  

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