Datasheet > 30CTQ100-N3

30CTQ100-N3

更新时间： 2022-05-13 06:10:49

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	174K
描述
Schottky Rectifier, 2 x 15 A

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30CTQ100-N3 数据手册

VS-30CTQ...PbF Series, VS-30CTQ...-N3 Series

www.vishay.com

Vishay Semiconductors

Schottky Rectifier, 2 x 15 A

FEATURES

Base

common

cathode

• 175 °C T_Joperation

• Low forward voltage drop

• High frequency operation

• High

purity,

high

temperature

epoxy

encapsulation for enhanced mechanical strength

and moisture resistance

Anode

Common

cathode

TO-220AB

• Guard ring for enhanced ruggedness and long

term reliability

• Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY

• Designed and qualified according to JEDEC-JESD47

Package

TO-220AB

2 x 15 A

• Halogen-free according to IEC 61249-2-21 definition

(-N3 only)

I_F(AV)

V_R

80 V, 100 V

0.67 V

DESCRIPTION

V_Fat I_F

The center tap Schottky rectifier series has been optimized

for low reverse leakage at high temperature. The proprietary

barrier technology allows for reliable operation up to 175 °C

junction temperature. Typical applications are in switching

power supplies, converters, freewheeling diodes, and

reverse battery protection.

_RMmax.

7.0 mA at 125 °C

175 °C

T_Jmax.

Diode variation

E_AS

Common cathode

7.50 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform

80/100

850

t_p= 5 μs sine

V_F

15 A_pk, T_J= 125 °C (per leg)

Range

0.67

T_J

- 55 to 175

°C

VOLTAGE RATINGS

VS-

PARAMETER

SYMBOL

UNITS

30CTQ080PbF 30CTQ080-N3 30CTQ100PbF 30CTQ100-N3

Maximum DC reverse voltage

V_R

100

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES UNITS

Maximum average

forward current

See fig. 5

per device

per leg

I_F(AV)

50 % duty cycle at T_C= 129 °C, rectangular waveform

Maximum peak one cycle non-repetitive

surge current per leg

See fig. 7

5 µs sine or 3 µs rect. pulse

850

Following any rated load

condition and with rated

V_RRMapplied

I_FSM

10 ms sine or 6 ms rect. pulse

275

Non-repetitive avalanche energy per leg

Repetitive avalanche current per leg

E_AS

I_AR

T_J= 25 °C, I_AS= 0.50 A, L = 60 mH

7.50

0.50

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

Revision: 26-Aug-11

Document Number: 94192

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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