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30CTQ100GSTRRP PDF预览

30CTQ100GSTRRP

更新时间: 2024-02-17 13:23:26
品牌 Logo 应用领域
威世 - VISHAY 高功率电源二极管
页数 文件大小 规格书
6页 111K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3

30CTQ100GSTRRP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-263包装说明:R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.48其他特性:FREE WHEELING DIODE, HIGH RELIABILITY
应用:HIGH POWER外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.69 V
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:650 A
元件数量:2相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:100 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

30CTQ100GSTRRP 数据手册

 浏览型号30CTQ100GSTRRP的Datasheet PDF文件第1页浏览型号30CTQ100GSTRRP的Datasheet PDF文件第3页浏览型号30CTQ100GSTRRP的Datasheet PDF文件第4页浏览型号30CTQ100GSTRRP的Datasheet PDF文件第5页浏览型号30CTQ100GSTRRP的Datasheet PDF文件第6页 
30CTQ...GSPbF, 30CTQ...G-1PbF  
Schottky Rectifier, 2 x 15 A  
Vishay High Power Products  
ELECTRICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TJ = 25 °C  
VALUES  
0.86  
1.05  
0.69  
0.82  
0.28  
7.0  
UNITS  
15 A  
30 A  
Maximum forward voltage drop per leg  
See fig. 1  
(1)  
VFM  
V
15 A  
TJ = 125 °C  
30 A  
TJ = 25 °C  
TJ = 125 °C  
Maximum reverse leakage current per leg  
See fig. 2  
(1)  
IRM  
CT  
V
R = Rated VR  
mA  
Maximum junction capacitance per leg  
Typical series inductance per leg  
Maximum voltage rate of change  
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C  
Measured lead to lead 5 mm from package body  
Rated VR  
500  
pF  
nH  
LS  
8.0  
dV/dt  
10 000  
V/µs  
Note  
(1)  
Pulse width < 300 µs, duty cycle < 2 %  
THERMAL - MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum junction and storage  
temperature range  
TJ, TStg  
- 55 to 175  
°C  
Maximum thermal resistance,  
junction to case per leg  
3.25  
1.63  
0.50  
RthJC  
DC operation  
Maximum thermal resistance,  
junction to case per package  
°C/W  
Typical thermal resistance,  
case to heatsink  
RthCS  
Mounting surface, smooth and greased  
2
g
Approximate weight  
Mounting torque  
0.07  
oz.  
minimum  
maximum  
6 (5)  
12 (10)  
kgf cm  
(lbf in)  
30CTQ080GS  
Case style D2PAK  
Case style TO-262  
30CTQ100GS  
30CTQ080G-1  
30CTQ100G-1  
Marking device  
www.vishay.com  
2
For technical questions, contact: diodestech@vishay.com  
Document Number: 94191  
Revision: 09-Sep-09  

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