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30CTQ100G-1TRR PDF预览

30CTQ100G-1TRR

更新时间: 2024-01-01 01:48:02
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
8页 259K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 100V V(RRM), Silicon, TO-262AA, PLASTIC, TO-262, 3 PIN

30CTQ100G-1TRR 技术参数

生命周期:Obsolete零件包装代码:TO-262AA
包装说明:R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.65
其他特性:HIGH RELIABILITY, FREE WHEELING DIODE应用:GENERAL PURPOSE
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
最大非重复峰值正向电流:650 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
认证状态:Not Qualified最大重复峰值反向电压:100 V
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

30CTQ100G-1TRR 数据手册

 浏览型号30CTQ100G-1TRR的Datasheet PDF文件第1页浏览型号30CTQ100G-1TRR的Datasheet PDF文件第3页浏览型号30CTQ100G-1TRR的Datasheet PDF文件第4页浏览型号30CTQ100G-1TRR的Datasheet PDF文件第5页浏览型号30CTQ100G-1TRR的Datasheet PDF文件第6页浏览型号30CTQ100G-1TRR的Datasheet PDF文件第7页 
30CTQ...GS, 30CTQ...G-1  
Bulletin PD-20835 11/05  
Voltage Ratings  
30CTQ80GS  
30CTQ80G-1  
30CTQ100GS  
30CTQ100G-1  
Parameters  
VR  
Max. DC Reverse Voltage (V)  
80  
100  
VRWM Max. Working Peak Reverse Voltage (V)  
Absolute Maximum Ratings  
Parameters  
Values Units  
Conditions  
IF(AV) Max. Average Forward (Per Leg)  
15  
A
50%duty cycle@TC =129°C,rectangular wave form  
Current *SeeFig.5  
IFSM Max. Peak One Cycle Non-Repetitive  
(Per Device)  
30  
650  
210  
Following any rated  
5µs Sineor3µsRect.pulse  
A
load condition and with  
SurgeCurrent (Per Leg) *SeeFig.7  
10msSineor6msRect. pulse rated VRRM applied  
EAS Non-Repetitive Avalanche Energy  
(Per Leg)  
7.50  
mJ TJ = 25°C, IAS = 0.50Amps,L=60mH  
IAR  
Repetitive Avalanche Current  
(Per Leg)  
0.50  
A
Current decaying linearly to zero in 1µsec  
Frequency limited by TJ max.VA =1.5xVR typical  
Electrical Specifications  
Parameters  
Values Units  
Conditions  
VFM Max. Forward Voltage Drop  
0.86  
1.05  
0.69  
0.82  
0.28  
7.0  
V
V
V
@ 15A  
@ 30A  
@ 15A  
TJ = 25 °C  
(Per Leg) * See Fig. 1  
(1)  
TJ = 125 °C  
V
@ 30A  
IRM Max. Reverse Leakage Current  
mA TJ = 25 °C  
mA TJ = 125 °C  
VR = rated VR  
(Per Leg) * See Fig. 2  
(1)  
CT  
LS  
Max. Junction Capacitance(Per Leg)  
Typical Series Inductance (Per Leg)  
500  
8.0  
10000  
pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C  
nH Measured lead to lead 5mm from package body  
V/ µs  
dv/dt Max. Voltage Rate of Change  
(Rated VR)  
(1) Pulse Width < 300µs, Duty Cycle <2%  
Thermal-Mechanical Specifications  
Parameters  
Values Units  
Conditions  
TJ  
Max. Junction Temperature Range  
-55to175  
-55to175  
3.25  
°C  
°C  
Tstg Max. Storage Temperature Range  
RthJC Max. Thermal Resistance Junction  
toCase (Per Leg)  
°C/W DC operation  
RthJC Max. Thermal Resistance Junction  
toCase(Per Package)  
RthCS Typical Thermal Resistance, Case  
toHeatsink  
1.63  
0.50  
°C/W DC operation  
°C/W Mounting surface,smooth and greased  
(only for TO-220)  
wt  
T
Approximate Weight  
Mounting Torque  
2(0.07) g(oz.)  
Min.  
Max.  
6(5)  
Kg-cm  
(Ibf-in)  
12(10)  
Device Marking  
30CTQ...GS  
30CTQ...G-1  
CasestyleD2-Pak  
CasestyleTO-262  
Document Number: 93309  
www.vishay.com  
2

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