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30CTQ100GSTRLP PDF预览

30CTQ100GSTRLP

更新时间: 2024-01-28 18:30:01
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网
页数 文件大小 规格书
6页 125K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3

30CTQ100GSTRLP 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-263包装说明:R-PSSO-G2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.27Is Samacsys:N
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY应用:GENERAL PURPOSE
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:850 A
元件数量:2相数:1
端子数量:2最大输出电流:15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:100 V
表面贴装:YES技术:SCHOTTKY
端子面层:MATTE TIN OVER NICKEL端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
Base Number Matches:1

30CTQ100GSTRLP 数据手册

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30CTQ... Series  
Vishay High Power Products  
Schottky Rectifier, 2 x 15 A  
FEATURES  
• 175 °C TJ operation  
• Center tap configuration  
• Low forward voltage drop  
• High frequency operation  
Base  
common  
cathode  
2
• High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
Anode  
Anode  
2
• Guard ring for enhanced ruggedness and long term  
reliability  
TO-220AB  
Common  
1
3
cathode  
• Designed and qualified for industrial level  
DESCRIPTION  
The center tap Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
PRODUCT SUMMARY  
IF(AV)  
2 x 15 A  
VR  
80/100 V  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
30  
UNITS  
Rectangular waveform  
A
V
80/100  
850  
tp = 5 µs sine  
A
VF  
15 Apk, TJ = 125 °C (per leg)  
Range  
0.67  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
30CTQ080  
30CTQ100  
100  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
VR  
80  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES UNITS  
Maximum average  
forward current  
See fig. 5  
per device  
per leg  
30  
IF(AV)  
50 % duty cycle at TC = 129 °C, rectangular waveform  
A
15  
Maximum peak one cycle non-repetitive  
surge current per leg  
See fig. 7  
Following any rated load  
condition and with rated  
VRRM applied  
5 µs sine or 3 µs rect. pulse  
850  
IFSM  
A
10 ms sine or 6 ms rect. pulse  
275  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 0.50 A, L = 60 mH  
7.50  
0.50  
mJ  
A
Current decaying linearly to zero in 1 µs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
Document Number: 93307  
Revision: 22-Aug-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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