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30C02CH PDF预览

30C02CH

更新时间: 2024-11-23 07:39:43
品牌 Logo 应用领域
三洋 - SANYO 放大器
页数 文件大小 规格书
4页 49K
描述
Low-Frequency General-Purpose Amplifier Applications

30C02CH 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.28
Is Samacsys:N最大集电极电流 (IC):0.7 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):300JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):0.7 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):540 MHz
Base Number Matches:1

30C02CH 数据手册

 浏览型号30C02CH的Datasheet PDF文件第2页浏览型号30C02CH的Datasheet PDF文件第3页浏览型号30C02CH的Datasheet PDF文件第4页 
Ordering number : ENN7363  
NPN Epitaxial Planar Silicon Transistor  
30C02CH  
Low-Frequency  
General-Purpose Amplifier Applications  
Applications  
Package Dimensions  
unit : mm  
2150A  
Low-frequency Amplifier, high-speed switching,  
small motor drive.  
[30C02CH]  
Features  
2.9  
0.15  
Large current capacitance.  
0.4  
Low collector-to-emitter saturation voltage (resistance).  
3
R
(sat) typ=330m[I =0.7A, I =35mA].  
CE  
C
B
0.05  
Ultrasmall package facilitates miniaturization in end  
products.  
Small ON-resistance (Ron).  
2
1
1.9  
1 : Base  
2 : Emitter  
3 : Collector  
SANYO : CPH3  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
40  
30  
V
5
700  
V
I
mA  
A
C
Collector Current (Pulse)  
Collector Dissipation  
I
1.4  
CP  
P
Mounted on a ceramic board (600mm20.8mm)  
700  
mW  
°C  
°C  
C
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
150  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
Unit  
min  
max  
100  
I
V
V
V
V
=30V, I =0  
nA  
nA  
CBO  
CB  
EB  
CE  
CE  
E
Emitter Cutoff Current  
DC Current Gain  
I
=4V, I =0  
100  
800  
EBO  
C
h
FE  
=2V, I =50mA  
300  
C
Gain-Bandwidth Product  
Marking : CL  
f
T
=10V, I =50mA  
540  
MHz  
C
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
http://semicon.sanyo.com/en/network  
O2203 TS IM TA-100140 No.7363-1/4  

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