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303CNQ090PBF

更新时间: 2024-11-28 13:04:27
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管局域网
页数 文件大小 规格书
4页 32K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 300A, 90V V(RRM), Silicon, TO-244AB, MODIFIED TO-244AB, 3 PIN

303CNQ090PBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:MODIFIED TO-244AB, 3 PINReach Compliance Code:compliant
风险等级:5.75其他特性:HIGH RELIABILITY, FREE WHEELING DIODE
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-244AB
JESD-30 代码:R-PUFM-X2最大非重复峰值正向电流:22000 A
元件数量:2相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:300 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:90 V表面贴装:NO
技术:SCHOTTKY端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

303CNQ090PBF 数据手册

 浏览型号303CNQ090PBF的Datasheet PDF文件第2页浏览型号303CNQ090PBF的Datasheet PDF文件第3页浏览型号303CNQ090PBF的Datasheet PDF文件第4页 
Ordering number : ENN6645  
P-Channel Silicon MOSFET  
3LP01C  
Ultrahigh-Speed Switching Applications  
Features  
Package Dimensions  
unit : mm  
Low ON-resistance.  
Ultrahigh-speed switching.  
2.5V drive.  
2091A  
[3LP01C]  
0.4  
0.16  
3
0 to 0.1  
0.95  
0.95  
2
1
1.9  
2.9  
1 : Gate  
2 : Source  
3 : Drain  
SANYO : CP  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
--30  
±10  
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
I
--0.1  
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW10µs, duty cycle1%  
--0.4  
A
DP  
P
0.25  
W
°C  
°C  
D
Tch  
150  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
--30  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Sourse Leakage Current  
Cutoff Voltage  
V
I
=--1mA, V =0  
V
µA  
µA  
V
(BR)DSS  
D GS  
I
I
V
V
V
V
=--30V, V =0  
GS  
--10  
DSS  
GSS  
DS  
GS  
DS  
DS  
=±8V, V =0  
DS  
±10  
V (off)  
GS  
=--10V, I =--100µA  
--0.4  
80  
--1.4  
D
Forward Transfer Admittance  
yfs  
=--10V, I =--50mA  
110  
mS  
D
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
90100 TS IM TA-1982No.6645-1/4  

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