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30-FT10NIA400S701-LP59F06 PDF预览

30-FT10NIA400S701-LP59F06

更新时间: 2023-06-19 15:26:06
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VINCOTECH /
页数 文件大小 规格书
11页 477K
描述
Low collector emitter saturation voltage;High speed and smooth switching

30-FT10NIA400S701-LP59F06 数据手册

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10-FY07ZAB075SM-L515B08  
target datasheet  
Characteristic Values  
Rectifier Diode  
Symbol  
Parameter  
Conditions  
Value  
Typ  
Unit  
V
T
r [V] IF [A] j [°C] Min  
Max  
Static  
25  
1,07  
1,13  
1,21  
Forward voltage  
Reverse leakage current  
25  
125  
150  
25  
V
VF  
50  
1600  
µA  
Ir  
145  
1100  
Thermal  
phaseꢀchange  
material  
Thermal resistance junction to sink  
0,82  
K/W  
R th(j-s)  
ʎ
=3,4W/mK  
PFC Switch  
Parameter  
Value  
Unit  
Symbol  
Conditions  
V GE [V] V CE [V] I C [A] T j[ °C]  
Min  
Typ  
Max  
Static  
25  
0,001  
3,2  
4
4,8  
2,1  
Gateꢀemitter threshold voltage  
=
V
V
VGE VCE  
V
GE(th)  
125  
25  
1,40  
1,48  
1,50  
Collectoremitter saturation voltage  
15  
100  
125  
150  
25  
V
CEsat  
100  
100  
Collectoremitter cutꢀoff current  
Gateꢀemitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
µA  
nA  
I
CES  
125  
25  
20  
I
GES  
125  
none  
6560  
97  
rg  
C
C
C
ies  
oes  
res  
Output capacitance  
f=1 MHz  
0
25  
25  
25  
pF  
Reverse ansfer capacitance  
21  
tr  
Gate charge  
15  
520  
100  
210  
nC  
Q
g
Thermal  
PhaseChange  
Material  
Thermal resistance junction to sink  
0,97  
K/W  
R
th(j-s)  
ʎ
=3,4W/mK  
Copyright Vincotech  
5
26 Aug. 2015 / Revision 1  

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