Datasheet > 30-FT07NIB300S506-LE06F53

30-FT07NIB300S506-LE06F53

更新时间： 2024-04-09 18:59:13

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
32页	9366K
描述
IGBT S5 High speed and smooth switching Low gate charge Very low collector emitter saturation voltage

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30-FT07NIB300S506-LE06F53

datasheet

Boost Switching Characteristics

figure 49.

FWD

figure 50.

FWD

Typical rate of fall of forward and reverse recovery current as a function of collector current

Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor

di_F/dt, di_rr/dt = f(I_C)

di_F/dt, di_rr/dt = f(R_gon)

12000

10000

8000

6000

4000

2000

di_F/dt ‒ ‒ ‒ ‒ ‒

di_rr/dt ──────

10000

8000

6000

4000

2000

100

150

200

250

300

350

I_C(A)

_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

V_CE

V_GE

I_C

350

-5/15

125 °C

150 °C

350

-5/15

180

125 °C

150 °C

T_j:

figure 51.

IGBT

Reverse bias safe operating area

I_C= f(V_CE

)

700

I_{C MAX}

600

500

400

300

200

100

200

300

400

500

600

700

800

_CE(V)

T_j=

150

°C

R_gon

R_goff

02 Feb. 2024 / Revision 1

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