Datasheet > 3.0SMCJ60CA

3.0SMCJ60CA

更新时间： 2024-11-29 06:18:19

品牌	Logo	应用领域
MDE		二极管光电二极管局域网
页数	文件大小	规格书
3页	113K
描述
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

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中文翻译

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技术参数
数据手册

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3.0SMCJ60CA 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AB
包装说明：	R-PDSO-C2	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.83
其他特性：	EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED	最大击穿电压：	73.7 V
最小击穿电压：	66.7 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-214AB	JESD-30 代码：	R-PDSO-C2
最大非重复峰值反向功率耗散：	3000 W	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
最低工作温度：	-55 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	BIDIRECTIONAL
最大重复峰值反向电压：	60 V	表面贴装：	YES
技术：	AVALANCHE	端子形式：	C BEND
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED

3.0SMCJ60CA 数据手册

MDE Semiconductor, Inc.

78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414

1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com

3.0SMCJ SERIES

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VOLTAGE-5.0 TO 170 Volts

3000 Watt Peak Pulse Power

FEATURES

• For surface mounted applications in order to

optimize board space

• Low profile package

• Built-in strain relief

• Glass passivated junction

• Low inductance

• Excellent clamping capability

• Repetition rate (duty cycle):0.01%

• Fast response time: typically less than

1.0 ps from 0 volts to BV for unidirectional types

• Typical IR less than 1µA above 10V

• High temperature soldering:

250°C/10 seconds at terminals

• Plastic package has Underwriters Laboratory

Flammability Classification 94 V-O

MECHANICAL DATA

Case: JEDEC DO214AB. Molded plastic over glass

passivated junction

Terminals: Solder plated, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denoted positive end (cathode)

except Bidirectional

Standard Packaging: 16mm tape (EIA STD RS-481)

Weight: 0.007 ounces, 0.021 grams)

DEVICES FOR BIPOLAR APPLICATIONS

For Bidirectional use C or CA Suffix for types 3.0SMCJ5.0 thru types 3.0SMCJ170 (e.g. 3.0SMCJ5.0C, 3.0SMCJ170CA)

Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

RATING

SYMBOL

VALUE

Minimum 3000

SEE TABLE 1

300

UNITS

Watts

Amps

°C

Peak Pulse Power Dissipation on 10/1000 µs

waveform (NOTE 1, 2, Fig.1)

P_PPM

I_PPM

Peak Pulse Current of on 10/1000 µs waveform (Note 1,Fig 3)

Peak Forward Surge Current, 8.3ms Single Half Sine-wave

Superimposed on Rated Load, (JEDEC Method)(Note2, 3)

Operatings and Storage Temperature Range

NOTES:

I_FSM

T_J, T_STG

-55 +150

1. Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.

2. Mounted on 8.0mm x 8.0mm Copper Pads to each terminal.

3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum.

Certified RoHS Compliant

UL File # E223026

12 3

中文翻译

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与3.0SMCJ60CA相关器件

型号	品牌	获取价格	描述	数据表
3.0SMCJ60CA-AU	PANJIT	获取价格	SMC
3.0SMCJ60CA-G	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 3000W, 60V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
3.0SMCJ60CA-T3-LF	WTE	获取价格	Trans Voltage Suppressor Diode, 3000W, 60V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
3.0SMCJ60C-G	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 3000W, 60V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
3.0SMCJ60C-T1	WTE	获取价格	Trans Voltage Suppressor Diode, 3000W, 60V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
3.0SMCJ60C-T3	WTE	获取价格	Trans Voltage Suppressor Diode, 3000W, 60V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
3.0SMCJ60C-T3-LF	WTE	获取价格	Trans Voltage Suppressor Diode, 3000W, 60V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
3.0SMCJ60-G	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 3000W, 60V V(RWM), Unidirectional, 1 Element, Silicon, DO-
3.0SMCJ60-LFR	FRONTIER	获取价格	3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
3.0SMCJ60-T1	WTE	获取价格	Trans Voltage Suppressor Diode, 3000W, 60V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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