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2WO10M

更新时间: 2024-11-15 19:15:15
品牌 Logo 应用领域
MICRO-ELECTRONICS 二极管
页数 文件大小 规格书
1页 141K
描述
Bridge Rectifier Diode, 1 Phase, 2A, 1000V V(RRM), Silicon, CASE R-9, 4 PIN

2WO10M 技术参数

生命周期:Contact Manufacturer包装说明:O-XBCY-W4
针数:4Reach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.75
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:O-XBCY-W4最大非重复峰值正向电流:50 A
元件数量:4相数:1
端子数量:4最高工作温度:125 °C
最大输出电流:2 A封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:CYLINDRICAL
认证状态:Not Qualified最大重复峰值反向电压:1000 V
子类别:Bridge Rectifier Diodes表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
Base Number Matches:1

2WO10M 数据手册

  

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