Datasheet > 2T1

2T1

更新时间： 2024-09-30 02:57:39

品牌	Logo	应用领域
AVICTEK		晶体晶体管
页数	文件大小	规格书
1页	39K
描述
SOT-23 Plastic-Encapsulate Transistors

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中文翻译

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数据手册

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2T1 数据手册

@vic

SOT-23 Plastic-Encapsulate Transistors

SOT-23

1. BASE

AV9012LT1 TRANSISTOR (PNP)

2. EMITTER

3. COLLECTOR

FEATURES

Power dissipation

P_CM:

2. 4

1. 3

0.3

W (Tamb=25℃)

Collector current

I_CM:

Collector-base voltage

-0.5

-40

V_(BR)CBO

Operating and storage junction temperature range

Unit: mm

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic= -100µA, I_E=0

Ic= -1mA, I_B=0

MIN

-40

-25

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=-100µA, I_C=0

V_CB=-40 V, I_E=0

-0.1

400

µA

I_CEO

V_CE=-20V, I_B=0

Collector cut-off current

I_EBO

V_EB= -5V, I_C=0

Emitter cut-off current

h_FE(1)

V_CE=-1V, I_C= -50mA

V_CE=-1V, I_C=-500mA

I_C=-500 mA, I_B= -50mA

120

DC current gain

h_FE(2)

V_CE(sat)

V_BE(sat)

-0.6

-1.2

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE=-6V, I_C= -20mA

f=30MHz

150

MHz

Transition frequency

f_T

CLASSIFICATION OF h_FE(1)

Rank

Range

120-200

200-350

300-400

DEVICE MARKING

S9012LT1=2T1

Website http://www.avictek.com

中文翻译

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