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2SK879YTE85R

更新时间： 2024-11-23 19:49:19
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
4页 286K
描述
TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal

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中文翻译

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2SK879YTE85R 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：unknownHTS代码：8541.21.00.95
风险等级：5.65其他特性：LOW NOISE
配置：SINGLEFET 技术：JUNCTION
JESD-30 代码：R-PDSO-G3元件数量：1
端子数量：3工作模式：DEPLETION MODE
最高工作温度：125 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

2SK879YTE85R 数据手册

 浏览型号2SK879YTE85R的Datasheet PDF文件第2页浏览型号2SK879YTE85R的Datasheet PDF文件第3页浏览型号2SK879YTE85R的Datasheet PDF文件第4页 
2SK879  
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type  
2SK879  
General Purpose and Impedance Converter and  
Condenser Microphone Applications  
Unit: mm  
•
•
•
•
High breakdown voltage: V  
= −50 V  
GDS  
High input impedance: I  
= −1.0 nA (max) (V  
= −30 V)  
GSS  
GS  
Low noise: NF = 0.5dB (typ.) (R = 100 kΩ, f = 120 Hz)  
G
Small package  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Gate-drain voltage  
Symbol  
Rating  
Unit  
V
−50  
10  
V
GDS  
Gate current  
I
mA  
mW  
°C  
G
Drain power dissipation  
Junction temperature  
Storage temperature range  
P
100  
D
T
j
125  
T
stg  
−55~125  
°C  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
―
SC-70  
TOSHIBA  
2-2E1B  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
Weight: 0.006 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate cut-off current  
Symbol  
Test Condition  
= −30 V, V = 0  
Min  
Typ.  
Max  
Unit  
I
V
V
⎯
⎯
⎯
−1.0  
nA  
V
GSS  
GS  
DS  
DS  
= 0, I = −100 μA  
Gate-drain breakdown voltage  
V
−50  
⎯
(BR) GDS  
G
I
DSS  
(Note)  
Drain current  
V
= 10 V, V  
= 0  
0.3  
⎯
6.5  
mA  
DS  
GS  
Gate-source cut-off voltage  
Forward transfer admittance  
Input capacitance  
V
V
V
V
V
V
= 10 V, I = 0.1 μA  
−0.4  
1.2  
⎯
⎯
⎯
−5.0  
⎯
V
GS (OFF)  
⎪Y ⎪  
DS  
DS  
DS  
GD  
DS  
D
= 10 V, V  
= 10 V, V  
= 0, f = 1 kHz  
= 0, f = 1 MHz  
mS  
pF  
pF  
fs  
GS  
GS  
C
8.2  
2.6  
⎯
iss  
rss  
Reverse transfer capacitance  
C
= −10 V, I = 0, f = 1 MHz  
⎯
⎯
D
= 15 V, V  
= 0  
GS  
Noise figure  
NF  
⎯
0.5  
⎯
dB  
R
= 100 kΩ, f = 120 Hz  
G
Note: I  
classification R: 0.30~0.75 mA, O: 0.60~1.40 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA  
DSS  
Marking  
1
2007-11-01  
1234

中文翻译

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