生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最大漏极电流 (Abs) (ID): | 0.07 A | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 0.34 W |
子类别: | FET RF Small Signal | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK676-3 | SONY |
获取价格 |
RF Small Signal Field-Effect Transistor, N-Channel |
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2SK676H5-2 | SONY |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H |
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2SK677-1 | SONY |
获取价格 |
RF Small Signal Field-Effect Transistor, N-Channel |
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2SK677-2 | SONY |
获取价格 |
RF Small Signal Field-Effect Transistor, N-Channel |
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2SK677H5-1 | SONY |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H |
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2SK677H5-2 | SONY |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H |
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2SK678 | TOSHIBA |
获取价格 |
2SK678 |
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2SK679 | NEC |
获取价格 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING |
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2SK679A | NEC |
获取价格 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING |
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2SK679A-AZ | NEC |
获取价格 |
暂无描述 |
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