生命周期: | Transferred | 包装说明: | CYLINDRICAL, O-PBCY-W3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.27 | 配置: | SINGLE |
最小漏源击穿电压: | 18 V | 最大漏极电流 (ID): | 0.01 A |
最高频带: | VERY HIGH FREQUENCY BAND | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK55RR | RENESAS |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2SK55TZ | RENESAS |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2SK56 | ETC |
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8Ii-N-cHANNEL Junction FET | |
2SK560 | HITACHI |
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HIGH SPEED POWER SWITCHING | |
2SK565 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 9.6A I(D) | TO-247VAR | |
2SK568 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 8A I(D) | TO-247VAR | |
2SK572 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 15A I(D) | TO-247AA | |
2SK573 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 15A I(D) | TO-247VAR | |
2SK578 | TOSHIBA |
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OUT LINE BQUIVALRN CIRCUIT | |
2SK579 | HITACHI |
获取价格 |
HIGH SPEED POWER SWITCHING |