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2SK55TZ

更新时间: 2024-02-15 12:40:30
品牌 Logo 应用领域
瑞萨 - RENESAS 放大器晶体管
页数 文件大小 规格书
1页 100K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, TO-92

2SK55TZ 技术参数

生命周期:Transferred包装说明:CYLINDRICAL, O-PBCY-W3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.38配置:SINGLE
最小漏源击穿电压:18 V最大漏极电流 (ID):0.01 A
最高频带:VERY HIGH FREQUENCY BANDJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON

2SK55TZ 数据手册

  

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