5秒后页面跳转
2SK552 PDF预览

2SK552

更新时间: 2024-02-01 08:01:56
品牌 Logo 应用领域
日立 - HITACHI 开关电源开关
页数 文件大小 规格书
1页 52K
描述
HIGH SPEED POWER SWITCHING

2SK552 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.84
配置:Single最大漏极电流 (Abs) (ID):5 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):50 W子类别:FET General Purpose Power
表面贴装:NO

2SK552 数据手册

  

与2SK552相关器件

型号 品牌 获取价格 描述 数据表
2SK553 HITACHI

获取价格

HIGH SPEED POWER SWITCHING
2SK554 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 7A I(D) | TO-220
2SK555 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7A I(D) | TO-220
2SK556 HITACHI

获取价格

HIGH SPEED POWER SWITCHING
2SK557 HITACHI

获取价格

HIGH SPEED POWER SWITCHING
2SK559 HITACHI

获取价格

HIGH SPEED POWER SWITCHING
2SK55-E HITACHI

获取价格

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
2SK55RF RENESAS

获取价格

VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, FET, TO-92
2SK55RR RENESAS

获取价格

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
2SK55TZ RENESAS

获取价格

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C