生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 5 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 50 W | 子类别: | FET General Purpose Power |
表面贴装: | NO |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK553 | HITACHI |
获取价格 |
HIGH SPEED POWER SWITCHING | |
2SK554 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 7A I(D) | TO-220 | |
2SK555 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7A I(D) | TO-220 | |
2SK556 | HITACHI |
获取价格 |
HIGH SPEED POWER SWITCHING | |
2SK557 | HITACHI |
获取价格 |
HIGH SPEED POWER SWITCHING | |
2SK559 | HITACHI |
获取价格 |
HIGH SPEED POWER SWITCHING | |
2SK55-E | HITACHI |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2SK55RF | RENESAS |
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VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, FET, TO-92 | |
2SK55RR | RENESAS |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2SK55TZ | RENESAS |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C |