生命周期: | Obsolete | Reach Compliance Code: | compliant |
风险等级: | 5.84 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 12 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 100 W |
子类别: | FET General Purpose Power | 表面贴装: | NO |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK557 | HITACHI |
获取价格 |
HIGH SPEED POWER SWITCHING |
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2SK559 | HITACHI |
获取价格 |
HIGH SPEED POWER SWITCHING |
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2SK55-E | HITACHI |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C |
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2SK55RF | RENESAS |
获取价格 |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, FET, TO-92 |
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2SK55RR | RENESAS |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C |
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2SK55TZ | RENESAS |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C |
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2SK56 | ETC |
获取价格 |
8Ii-N-cHANNEL Junction FET |
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2SK560 | HITACHI |
获取价格 |
HIGH SPEED POWER SWITCHING |
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2SK565 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 9.6A I(D) | TO-247VAR |
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2SK568 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 8A I(D) | TO-247VAR |
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