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2SK2838_09 PDF预览

2SK2838_09

更新时间: 2024-09-25 07:32:23
品牌 Logo 应用领域
东芝 - TOSHIBA 转换器稳压器电机驱动DC-DC转换器
页数 文件大小 规格书
6页 427K
描述
Chopper Regulator, DC−DC Converter and Motor Drive Applications

2SK2838_09 数据手册

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2SK2838  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)  
2SK2838  
Chopper Regulator, DCDC Converter and Motor Drive  
Applications  
Unit: mm  
z Low drainsource ON resistance : R  
= 0.84 (typ.)  
DS (ON)  
z High forward transfer admittance : |Y | = 4.4 S (typ.)  
fs  
z Low leakage current : I  
= 100 μA (max) (V  
= 400 V)  
DSS  
DS  
z Enhancement mode : V = 2.0 to 4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drainsource voltage  
Symbol  
Rating  
Unit  
V
V
V
400  
400  
±30  
5.5  
22  
DSS  
Draingate voltage (R  
Gatesource voltage  
= 20 k)  
V
GS  
DGR  
V
V
GSS  
DC (Note 1)  
I
D
A
Drain current  
Pulse (Note 1)  
I
A
DP  
Drain power dissipation (Tc = 25°C)  
Single pulse avalanche energy  
P
40  
W
D
AS  
AR  
JEDEC  
JEITA  
E
223  
mJ  
(Note 2)  
TOSHIBA  
2-10S1B  
Avalanche current  
I
5.5  
4.0  
A
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
Weight: 1.5 g (typ.)  
AR  
T
150  
ch  
Storage temperature range  
T
stg  
55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.)  
may cause this product to decrease in the reliability significantly even if the  
operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings. Please design the appropriate reliability  
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data  
(i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
°C / W  
°C / W  
3.125  
83.3  
th (chc)  
JEDEC  
JEITA  
R
th (cha)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 90 V, T = 25°C (initial), L = 12.0 mH, R = 25 ,  
V
DD  
TOSHIBA  
2-10S2B  
ch  
G
I
= 5.5 A  
AR  
Weight: 1.5 g (typ.)  
Note 3: Repetitive rating: pulse width limited by maximum channel  
temperature  
This transistor is an electrostatic-sensitive device.  
Please handle with caution.  
1
2009-09-29  

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