是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 5 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2053-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 5A I(D), 16V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal | |
2SK2053-T1 | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,16V V(BR)DSS,5A I(D),TO-243VAR | |
2SK2053-T2 | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,16V V(BR)DSS,5A I(D),TO-243VAR | |
2SK2053-T2-AY | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,16V V(BR)DSS,5A I(D),TO-243VAR | |
2SK2054 | NEC |
获取价格 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING | |
2SK2054-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal | |
2SK2055 | NEC |
获取价格 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING | |
2SK2056 | TOSHIBA |
获取价格 |
TRANSISTOR 4 A, 800 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK2057 | TOSHIBA |
获取价格 |
Field Effect Transistor Silicon N Channel MOS Type | |
2SK2058 | SANYO |
获取价格 |
Very High-Speed Switching Applications |