2SK1151L-E

更新时间： 2024-01-10 22:48:20

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	89K
描述
Silicon N Channel MOS FET

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数据手册

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2SK1151L-E 数据手册

2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S)

Static Drain to Source on State

Resistance vs. Temperature

Forward Transfer Admittance

vs. Drain Current

I_D= 2 A

V_DS= 20 V

Pulse Test

V_GS= 10 V

Pulse Test

–25°C

1.0

0.5

T_C= 25°C

1 A

75°C

0.5 A

0.2

0.1

–40

120

160

0.1 0.2

0.5 1.0

0.05

Case Temperature T_C(°C)

Drain Current I_D(A)

Body to Drain Diode Reverse

Recovery Time

Typical Capacitance

vs. Drain to Source Voltage

1,000

100

V_GS= 0

f = 1 MHz

di/dt = 100 A/µs, Ta = 25°C

V_GS= 0

Pulse Test

500

Ciss

200

100

Coss

Crss

0.05 0.1 0.2

0.5 1.0

Reverse Drain Current I_DR(A)

Drain to Source Voltage V_DS(V)

Dynamic Input Characteristics

Switching Characteristics

500

400

300

100

•

V_GS= 10 V V_DD= 30 V

100 V

250 V

•

PW = 2 µs, duty < 1%

V_DS

400 V

t_{d (off)}

t_f

V_GS

200

100

t_{d (on)}

t_r

I_D= 1.5 A

V_DD= 400 V

250 V

100 V

0.05 0.1 0.2

0.5 1.0

Gate Charge Qg (nc)

Drain Current I_D(A)

Rev.2.00 Sep 07, 2005 page 4 of 7

1 2 345 6 7 8

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