2SK1151(L)

更新时间： 2024-02-01 17:32:58

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2SK1151(L) 数据手册

2SK1151(L)(S), 2SK1152(L)(S)

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

2SK1151

2SK1152

V_DSS

450

500

Gate to source voltage

Drain current

V_GSS

±30

I_D

1.5

Drain peak current

I_D(pulse)

Body to drain diode reverse drain current

Channel dissipation

I_DR

1.5

Pch*²

Tch

°C

Channel temperature

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T_C= 25°C

123 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
2SK1151(L)(S)\|2SK1152(L)(S)	ETC	获取价格
2SK1151(S)	HITACHI	获取价格	Power Field-Effect Transistor, 1.5A I(D), 450V, 5.5ohm, 1-Element, N-Channel, Silicon, Met
2SK1151(S)	RENESAS	获取价格	1.5A, 450V, 5.5ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3/2
2SK1151(S)TL	RENESAS	获取价格	1.5A, 450V, 5.5ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1151(S)TL	HITACHI	获取价格	Power Field-Effect Transistor, 1.5A I(D), 450V, 5.5ohm, 1-Element, N-Channel, Silicon, Met
2SK1151(S)TR	HITACHI	获取价格	Power Field-Effect Transistor, 1.5A I(D), 450V, 5.5ohm, 1-Element, N-Channel, Silicon, Met
2SK1151(S)TR	RENESAS	获取价格	Power Field-Effect Transistor, 1.5A I(D), 450V, 5.5ohm, 1-Element, N-Channel, Silicon, Met
2SK1151_11	RENESAS	获取价格	Silicon N Channel MOS FET
2SK1151L	RENESAS	获取价格	Silicon N Channel MOS FET
2SK1151L	HITACHI	获取价格	Silicon N-Channel MOS FET