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2SK1070PICUL PDF预览

2SK1070PICUL

更新时间: 2024-01-16 07:07:03
品牌 Logo 应用领域
日立 - HITACHI 晶体小信号场效应晶体管光电二极管放大器
页数 文件大小 规格书
5页 27K
描述
Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction FET, MPAK-3

2SK1070PICUL 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.47配置:SINGLE
最大漏极电流 (ID):0.05 AFET 技术:JUNCTION
JESD-30 代码:R-PDSO-G3JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Bismuth (Sn/Bi)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:20
晶体管应用:AMPLIFIER晶体管元件材料:SILICON

2SK1070PICUL 数据手册

 浏览型号2SK1070PICUL的Datasheet PDF文件第1页浏览型号2SK1070PICUL的Datasheet PDF文件第2页浏览型号2SK1070PICUL的Datasheet PDF文件第3页浏览型号2SK1070PICUL的Datasheet PDF文件第4页 
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
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Europe  
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: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm  
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Japan  
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For further information write to:  
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(America) Inc.  
Hitachi Europe GmbH  
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Tel: <44> (1628) 585000  
Fax: <44> (1628) 778322  
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.  

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