Datasheet > 2SK1062_07

2SK1062_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	587K
描述
Silicon N Channel MOS Type High Speed Switching Applications

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2SK1062_07 数据手册

2SK1062

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2SK1062

High Speed Switching Applications

Unit: mm

Analog Switching Applications

Interface Applications

•

Excellent switching time: t = 14 ns (typ.)

High forward transfer admittance: |Y | = 100 ms (min)

@I = 50 mA

•

Low on resistance: R

= 0.6 Ω (typ.) @ I = 50 mA

DS (ON) D

Enhancement-mode

Complementary to 2SJ168

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

±20

Gate-source voltage

GSS

200

JEDEC

JEITA

―

Drain current

Pulse

800

SC-59

2-3F1F

Drain power dissipation (Ta = 25°C)

Channel temperature

200

°C

stg

TOSHIBA

150

Weight: 0.012 g (typ.)

Storage temperature range

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

2007-11-01

12 3 4 5

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