Datasheet > 2SK1061_07

2SK1061_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	534K
描述
Silicon N Channel MOS Type High Speed Switching Applications

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数据手册

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2SK1061_07 数据手册

2SK1061

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2SK1061

High Speed Switching Applications

Unit: mm

Analog Switch Applications

Interface Applications

•

Excellent switching times: t = 14 ns (typ.)

High forward transfer admittance: |Y | = 100 mS (min)

Low on resistance: R

Enhancement-mode

= 0.6 Ω (typ.)

DS (ON)

Complementary to 2SJ167

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

±20

Gate-source voltage

GSS

200

Drain current

Pulse

800

JEDEC

JEITA

―

Drain power dissipation (Ta = 25°C)

Channel temperature

300

°C

stg

150

TOSHIBA

2-4E1E

Storage temperature range

−55~150

°C

Weight: 0.13 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

12 3 4 5

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