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2SJ280(S)TR PDF预览

2SJ280(S)TR

更新时间: 2024-02-28 16:18:40
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日立 - HITACHI /
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8页 125K
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2SJ280(S)TR 数据手册

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2SJ280 L , 2SJ280 S  
Body-Drain Diode Reverse  
Recovery Time  
Typical Capacitance  
vs. Drain-Source Voltage  
500  
10000  
1000  
Ciss  
200  
100  
50  
Coss  
Crss  
100  
10  
di/dt = 50 A/ µs, VGS = 0  
Ta = 25°C  
20  
10  
VGS= 0,  
f = 1 MHz  
5
–1 –2  
0
–10  
–20  
–30  
–40  
–50  
–5 –10 –20  
–50 –100  
Drain to Source Voltage VDS (V)  
Reverse Drain Current IDR (A)  
Switching Characteristics  
t (off)  
Dynamic Input Characteristics  
1000  
0
0
VDD= –10 V  
–25 V  
d
–50 V  
–20  
–4  
500  
200  
100  
t
f
VDS  
–40  
–60  
–8  
VDD= –10 V  
–25 V  
t
r
–50 V  
–12  
–16  
–20  
VGS  
50  
20  
10  
t (on)  
d
ID = –30 A  
–80  
VGS = –10 V, V = –30 V  
PW = 2 s, duty 1%  
:
DD  
=
<
µ
–100  
0
40  
80  
120  
160  
200  
–0.5 –1 –2  
–5 –10 –20 –50  
Gate Charge Qg (nc)  
Drain Current ID (A)  

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