生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.28 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 30 A |
最大漏源导通电阻: | 0.06 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
最大脉冲漏极电流 (IDM): | 120 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ280(S)TL | HITACHI |
获取价格 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.06ohm, 1-Element, P-Channel, Silicon, Meta | |
2SJ280(S)TR | HITACHI |
获取价格 |
暂无描述 | |
2SJ280L | HITACHI |
获取价格 |
SILICON P-CHANNEL MOS FET | |
2SJ280L-E | RENESAS |
获取价格 |
Pch Single Power MOSFET -60V -30A 43mohm LDPAK(L) | |
2SJ280S | HITACHI |
获取价格 |
SILICON P-CHANNEL MOS FET | |
2SJ281 | SANYO |
获取价格 |
Very High-Speed Switching Applications | |
2SJ281FA | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 3A I(D) | TO-252VAR | |
2SJ282 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 3A I(D) | TO-220AB | |
2SJ284 | SANYO |
获取价格 |
Very High-Speed Switching Applications | |
2SJ285 | SANYO |
获取价格 |
Very High-Speed Switching Applications |