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2SD667A-B-AP-HF PDF预览

2SD667A-B-AP-HF

更新时间: 2024-01-19 06:15:38
品牌 Logo 应用领域
美微科 - MCC 晶体管
页数 文件大小 规格书
4页 571K
描述
Small Signal Bipolar Transistor,

2SD667A-B-AP-HF 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.59
Is Samacsys:N最大集电极电流 (IC):1 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):60JESD-30 代码:O-PBCY-T3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):140 MHz
Base Number Matches:1

2SD667A-B-AP-HF 数据手册

 浏览型号2SD667A-B-AP-HF的Datasheet PDF文件第2页浏览型号2SD667A-B-AP-HF的Datasheet PDF文件第3页浏览型号2SD667A-B-AP-HF的Datasheet PDF文件第4页 
2SD667(A)-B  
2SD667(A)-C  
2SD667(A)-D  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
NPN Silicon  
Plastic-Encapsulate  
Transistor  
·
Capable of 0.9Watts of Power Dissipation.  
Collector-current 1.0A  
Collector-base Voltage 120V  
Operating and storage junction temperature range: -55OC to +150OC  
Halogen free available upon request by adding suffix "-HF"  
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
RoHS Compliant. See ordering information)  
·
·
TO-92MOD  
Electrical Characteristics @ 25OC Unless Otherwise Specified  
K
A
Symbol  
Parameter  
Min  
Max  
Units  
L
OFF CHARACTERISTICS  
J
Collector-Emitter Breakdown Voltage  
(I = 1mAdc, IB=0)  
C
80  
Vdc  
2SD667  
V(BR)CEO  
M
100  
120  
Vdc  
Vdc  
2SD667A  
B
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Base Breakdown Voltage  
H
(I = 10uAdc, IE=0)  
G
C
Emitter-Base Voltage  
(I = 10uAdc,I =0)  
5
Vdc  
E
C
C
Collector Cutoff Current  
10  
uAdc  
(VCB= 100Vdc, IE=0)  
F
ON CHARACTERISTICS  
h FE  
DC Current Gain  
60  
320  
1
(I = 150mAdc, VCE=5Vdc)  
C
E
E
E
C
VCE(sat)  
Collector-Emitter Saturation Voltage  
(I = 500mAdc, I = 50mAdc)  
C
B
B
D
Vdc  
C
B
STRAIGHT LEAD BENT LEAD  
BULK PACK AMMO PACK  
DIMENSIONS  
SMALL-SIGNAL CHARACTERISTICS  
fT  
Transistor Frequency  
INCHES  
MIN  
.228  
.331  
.016  
MM  
MIN  
(I = 150mAdc, VCE=5Vdc)  
140(type)  
20(type)  
MHz  
pF  
DIM  
A
B
MAX  
MAX  
NOTE  
6.20  
8.80  
0.60  
Straight Lead  
C
.
244  
5.80  
8.40  
0.40  
2.90  
C
ob  
Output capacitance  
(IE= 0, VCE=10Vdc, f=1 MHz)  
.
.
.
346  
024  
122  
C
.114  
3.10  
D
Bent Lead  
.173  
.220  
4.40  
5.60  
Straight Lead  
Bent Lead  
.059  
1.50  
2.80  
E
.086  
.110  
2.20  
13.80  
0.90  
4.00  
4.70  
-----  
F
.543  
.
559  
14.20  
1.10  
G
H
J
K
L
.035  
.157  
.185  
----  
.016  
.068  
.
043  
-----  
---  
5.10  
1.60  
0.50  
2.03  
FE (1)  
.
.
.
.
201  
063  
020  
080  
CLASSIFICATION OF H  
Rank  
B
C
D
0.40  
1.73  
Range  
60-120  
100-200  
160-320  
M
* For ammo packing detailed specification, click here to visit our website  
of product packaging for details.  
www.mccsemi.com  
1 of 4  
Revision:  
B
2013/07/29  

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