Datasheet > 2SD667AD(TO-92MOD)

2SD667AD(TO-92MOD)

更新时间： 2024-01-30 18:31:43

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2SD667AD(TO-92MOD) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92MOD Plastic-Encapsulate Transistors

TO-92MOD

2SD667,2SD667A TRANSISTOR (NPN)

1. EMITTER

FEATURES

Low Frequency Power Amplifier

Complementary Pair with 2SB647/A

2. COLLECTOR

3. BASE

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

Parameter

Collector- Base Voltage

Collector-Emitter Voltage

Value

120

Unit

V_CEO

2SD667

2SD667A

100

V_EBO

I_C

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

P_C

900

150

-55-150

T_J

℃

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

120

Typ

Max

Unit

Collector-base breakdown voltage

V_(BR)CBOI_C=10μA,I_E=0

V_(BR)CEOI_C=1mA,I_B=0

V_(BR)EBOI_E=10μA,I_C=0

2SD667

Collector-emitter breakdown voltage

2SD667A

100

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

I_CBO

I_EBO

V_CB=100V,I_E=0

V_EB=4V,I_C=0

μA

2SD667

320

h_FE(1)

V_CE=5V,I_C=150mA

DC current gain

2SD667A

h_FE(2)

V_CE(sat)

V_BE

V_CE=5V,I_C=500mA

I_C=500mA,I_B=50mA

V_CE=5V,I_C=150mA

V_CB=10V,I_E=0,f=1MHz

Collector-emitter saturation voltage

Base-emitter voltage

1.5

Transition frequency

f_T

140

MHz

Collector output capacitance

CLASSIFICATION OF h_FE(1)

Rank

C_ob

2SD667

Range

60-120

100-200

160-320

2SD667A

160-320

A,Jun,2011

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