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2SD667-C PDF预览

2SD667-C

更新时间: 2024-11-25 13:04:23
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
6页 160K
描述
SMALL SIGNAL TRANSISTOR

2SD667-C 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-W3Reach Compliance Code:unknown
风险等级:5.21JESD-30 代码:O-PBCY-W3
JESD-609代码:e0端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

2SD667-C 数据手册

 浏览型号2SD667-C的Datasheet PDF文件第2页浏览型号2SD667-C的Datasheet PDF文件第3页浏览型号2SD667-C的Datasheet PDF文件第4页浏览型号2SD667-C的Datasheet PDF文件第5页浏览型号2SD667-C的Datasheet PDF文件第6页 
2SD667, 2SD667A  
Silicon NPN Epitaxial  
REJ03G0769-0200  
(Previous ADE-208-1137)  
Rev.2.00  
Aug.10.2005  
Application  
Low frequency power amplifier  
Complementary pair with 2SB647/A  
Outline  
RENESAS Packaode: PRSS0003DC-A  
(Package namMod)  
1. Emitter  
2. Collector  
3. Base  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Unit  
V
80  
V
5
V
1
1
A
Collector peak current  
Collector power dissipation  
Junction temperature  
Storage temperature  
iC(peak)  
PC  
2
0.9  
2
0.9  
A
W
°C  
°C  
Tj  
150  
150  
Tstg  
–55 to +150  
–50 to +150  
Rev.2.00 Aug 10, 2005 page 1 of 5  

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