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2SD667C-E PDF预览

2SD667C-E

更新时间: 2024-11-28 13:04:23
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
6页 160K
描述
1000mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN

2SD667C-E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.59
最大集电极电流 (IC):1 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:O-PBCY-T3JESD-609代码:e2
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:TIN COPPER端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):140 MHzBase Number Matches:1

2SD667C-E 数据手册

 浏览型号2SD667C-E的Datasheet PDF文件第2页浏览型号2SD667C-E的Datasheet PDF文件第3页浏览型号2SD667C-E的Datasheet PDF文件第4页浏览型号2SD667C-E的Datasheet PDF文件第5页浏览型号2SD667C-E的Datasheet PDF文件第6页 
2SD667, 2SD667A  
Silicon NPN Epitaxial  
REJ03G0769-0200  
(Previous ADE-208-1137)  
Rev.2.00  
Aug.10.2005  
Application  
Low frequency power amplifier  
Complementary pair with 2SB647/A  
Outline  
RENESAS Packaode: PRSS0003DC-A  
(Package namMod)  
1. Emitter  
2. Collector  
3. Base  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Unit  
V
80  
V
5
V
1
1
A
Collector peak current  
Collector power dissipation  
Junction temperature  
Storage temperature  
iC(peak)  
PC  
2
0.9  
2
0.9  
A
W
°C  
°C  
Tj  
150  
150  
Tstg  
–55 to +150  
–50 to +150  
Rev.2.00 Aug 10, 2005 page 1 of 5  

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