是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-92 |
包装说明: | CYLINDRICAL, O-PBCY-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.59 |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 100 |
JESD-30 代码: | O-PBCY-T3 | JESD-609代码: | e2 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN COPPER | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 140 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD667CTZ | HITACHI |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92MOD, | |
2SD667CTZ-E | RENESAS |
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Silicon NPN Epitaxial | |
2SD667D | ETC |
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TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-92VAR | |
2SD667-D-AP-HF | MCC |
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Small Signal Bipolar Transistor, | |
2SD667DTZ-E | RENESAS |
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Silicon NPN Epitaxial | |
2SD667G-B-T9N-B | UTC |
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Small Signal Bipolar Transistor, | |
2SD667G-C-T9N-B | UTC |
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Small Signal Bipolar Transistor, | |
2SD667G-C-T9N-K | UTC |
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Small Signal Bipolar Transistor, | |
2SD667G-T9N-B | UTC |
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SILICON NPN EPITAXIAL | |
2SD667G-T9N-K | UTC |
获取价格 |
SILICON NPN EPITAXIAL |